No. 3, 2016
Development Prospects of Test Methods of the Solid-State Microwave Electronics to Special Factors Impact

M.V. Kuliev1, M.S. Petrov2, A.I. Petrov3

1JSC "Scientific-production enterprise "Pulsar"
Moscow, Russia
e-mail: m.kuliev@mail.ru
2Research Institute of Scientific Instruments
Lytkarino, Moscow region, Russia
3JSC "Scientific-production enterprise "Istok" of Shokin"
Fryazino, Moscow region, Russia

Results of tests to special factors impact of the solid-state microwave electronics created on the basis of different materials are generalized. The main problems of this products test are described. Ways of test methods development are offered.

Keywords: solid-state microwave electronics, monolithic integrated circuits, test methods, radiation factors.
Neutron Irradiation Influence on Parameters of the Silicon Voltage Limiters and the Prediction Method of Their Radiation Hardness

A.Z. Rakhmatov1, M.Yu. Tashmetov2, S.P. Skornyakov3, A.B. Karimov4

1JSC "Foton"
Tashkent, Uzbekistan
2Institute of Nuclear Physics AS RUz
Tashkent, Uzbekistan
3JSC "Novosibirsk plant of semiconductor devices with design bureau"
Novosibirsk, Russia
4Physical-Technical Institute of AS RUz
Tashkent, Uzbekistan
e-mail: yodgorova@uzsci.net

The neutron irradiation influence on breakdown voltage Ubd and limiting voltage Ulim of the limiters are studied. It is established that the relation value Ubd()/Ulim(0) practically doesn´t depend on the initial Ubd(0), and also on the initial silicon specific resistivity. The calculation method of voltage limiter radiation hardness is proposed considering its geometric characteristics, initial silicon specific resistivity, original values of breakdown voltage and limiting voltage, limiting current and impurity concentration gradient.

Keywords: voltage limiters, neutron irradiation, limiting voltage, breakdown voltage, p-n-junction, capacitance-voltage characteristics, concentration gradient.
Accounting Methods f Ambient Temperature Influence n Drift f the p-MOP Dosimeter Informative Parameter

V.I. Butin, F.V. Chubrukov

All-Russia Research Institute of Automatics
Moscow, Russia
e-mail: vniia@vniia.ru

Accounting methods of ambient temperature influence on the informative parameter drift of absorbed dose detector are presented. The developed methods allow to consider temperature drift of a drain current of the IC p-channel transistors used as absorbed dose dosimeters and to minimize a measurement error of the absorbed dose from temperature conditions.

Keywords: operational dosimetry, MOS device, absorbed dose, CMOS dosimeter, calibration.
Lifetime Prediction for Optocouplers in Space Radiation Conditions Using the Consecutive Modelling of Ionizing and Displacement Damage Effects

K.I. Tapero, A.S. Petrov, G.M. Mosina

Research Institute of Scientific Instruments
Lytkarino, Moscow region, Russia
e-mail: as_petrov@inbox.ru

The experimental results on the change in current-transfer ratio (CTR) for optocouplers with a bipolar phototransistor output under the irradiation by gamma rays, fast reactor neutrons, high-energy protons and electrons are presented. Basing on the presented results it is shown that the change in CTR of optocouplers in actual space conditions during operation on orbit cannot be obtained as a simple combination of curves, which describe the change in CTR versus total ionizing dose (TID) and the change in CTR versus displacement damage dose (DDD). In some cases such a combination can really be found, however it cannot be considered as a universal function suitable for the description of radiation response of all kinds of optocouplers in each type of space radiation conditions. The paper puts forward a method for radiation testing of optocouplers intended for space application that takes into account the degradation in actual space conditions due to both TID and DDD effects.

Keywords: optocouplers, space radiation, radiation hardness assurance, total ionizing dose, displacement damage dose.
Spatial and Temporal Distributions of Solder Jointsin the CCD Arrays Irradiated with Nucleons

N.A. Ivanov1, O.V. Lobanov1, V.V. Pashuk1, M.O. Prygunov2

1B.P. Konstantinov PNPI NRC "Kurchatov Institute"
Gatchina, Leningrad region, Russia
St. Petersburg, Russia
 e-mail: prigunov-max@yandex.ru

Spatial and temporal distributions of pixels with big value of the dark current in the CCD arrays irradiated with protons and neutrons on the synchrocyclotron PNPI are considered. Data on solder joint clusters formation in the irradiated matrixes is provided.

Keywords: CCD arrays, protons, neutrons, dark current, solder joint, clusters, recoil nucleus.
Influence of Gamma and Electronic Radiations on the CMOS LSI Parameters

Yu.V. Bogatyrev, S.B. Lastovskiy, S.V. Shvedov, A.V. Ketko, A.S. Yakushevich

1SSPA "Scientific-Practical Materials Research Centre NAS of Belarus"
Minsk, Belarus
e-mail: bogat@ifttp.bas-net.by
2LLC "Integral"
Minsk, Belarus

Evaluation results of relative efficiency of electron impact with energy in a range to 1.8 MeV and Co60 gamma radiation on CMOS LSI 1632PT1T are presented.

Keywords: relative impact efficiency, chip, read-only memory, gamma radiation, electronic radiation.
The Radiation-Resistant Voltage Converter

E.V. Samardakevich, A.S. Bazhenov, N.F. Stasev, V.V. Narkevich

JSC "Scientific-production center "Poluys"
Tomsk, Russia
e-mail: info@polus-tomsk.ru

The experiments are made on irradiation of power supplies for sea and land application resistant to C3 factor influence, equal 2U and multichannel power supplies with telemetry functions for space application with hardness on key parameters to 1.15·2U. It is shown, that mainly on home element base developed power supplies conform to high requirements for radiation hardness and can be used in the space equipment with long active shelf life, and also in the special-purpose equipment.

Keywords: onboard equipment, secondary power supply, radiation hardness, dose effects.
Research of Sensitivity of CMOS Integrated Circuits to Latch-Up, Caused by Separate Heavy Charged Particles Action, with Pulse Bremsstrahlung Use

V.F. Zinchenko, K.V. Lavrentiev, A.I. Ozerov, B.N. Semenets, A.M. Chlenov

Research Institute of Scientific Instruments
Lytkarino, Moscow region, Russia
e-mail: vfzinchenko@niipribor.ru

Features of latch-up dynamics in CMOS integrated circuits by action of pulse bremsstrahlung are considered. The possibility of use of the critical charge concept for the analysis of experiment results at volume and local ionization of thyristor structure is shown. The technique of the integrated circuits selection tolerant to latch-up at heavy charged particles action with pulse bremsstrahlung use is offered.

Keywords: CMOS, integrated circuit, bremsstrahlung, critical charge, heavy charged particles, space.
Subnanosecond Electron Accelerator with Gas-Filled Shaper

A.L. Yuryev, S.L. Elyash, T.V. Loiko, S.P. Pukhov, D.P. Nikolaev, A.F. Pokolev, S.M. Lashmanov

RFNC All-Russian Research Institute of Experimental Physics
Sarov, Nizhny Novgorod region, Russia
e-mail: elyash@expd.vniief.ru

The prototype of the subnanosecond electron accelerator based on the small-size accelerator ARSA with the gas-filled shaper (nitrogen ~ 4 MPas) is developed and probed. The operation principle of the shaper consists in charging of the short accumulative line and its discharge to the step line with the accelerating tube generating electrons. The current pulse duration of an electron beam doesn´t exceed 0.3 nanoseconds, current amplitude ~ 1 kA.

Keywords: accelerator, gas-filled shaper, subnanosecond voltage impulses.
Problems and Perspectives of Quality Improvement of Radiation Tests and Researches on High-Current Pulse Accelerators

A.M. Chlenov, N.G. Mordasov

Research Institute of Scientific Instruments
Lytkarino, Moscow region, Russia
e-mail: ngmordasov@niipribor.ru

It is shown that dosimetric support of radiation tests and sample researches can be qualitatively improved by measuring not only dose, but also spectral and energetic bremsstrahlung characteristics. The technique and the device for measurement of integral and dynamic-response bremsstrahlung characteristics of pulse electron accelerators are offered.

Keywords: high-current pulse accelerator, target converter, bremsstrahlung, energy spectrum, transfer characteristic, measuring transducer.