Page.
No. 3, 2021
5-10
Specialized Method for Estimating Radiation Degradation of Photovoltaic Converters for Concentrated Solar Radiation and Subcells Based on InGaP, InGaAs and Ge

G.S. Voevodkin1,2, M.V. Ryabtseva1,2, I.V. Badurin1,3, N.T. Vagapova1,2,3,
E.S. Loginova1,3, K.I. Tapero2,4, A.S. Petrov4

1JSC Scientific and Production Enterprise Kvant, Moscow, Russia
e-mail: umc@npp-kvant.ru
2National University of Science and Technology MISiS, Moscow, Russia
3MIREA - Russian Technological University, Moscow, Russia
4JSC Research Institute of Scientific Instruments, Lytkarino, Moscow Region, Russia

The research of the 7 MeV electrons effect on subcells of photovoltaic converters (PVCs) of concentrated solar radiation (CSR) based on InGaP/InGaAs/Ge was carried out. Before and after each stage of irradiation, the spectral and electrical characteristics of the PVCs CSR were investigated. The change in the main electrical parameters, as well as the diffusion length of minority charge carriers (MCC) of semiconductor materials of the PVC CSR subcells, is considered. A technique for calculating the voltage generated by each subcell of the PVC CSR is proposed and tested. Based on the results obtained, the subcell most vulnerable to the action of electrons was determined.

Keywords: photovoltaic converter, AIIIBV semiconductor materials, concentrated solar radiation, high-energy electrons, I-V characteristic, electroluminescence spectroscopy, external quantum efficiency.
11-16
Model of Local Dose Load of Continuous Protection with Flat Limiting Surfaces

A.N. Panyushkin1, N.N. Panyushkin2, I.P. Biryukova3

1AO "Scientific Design and Technological Bureau "Ferrite"
Voronezh, Russia
2Voronezh State University of Forestry and Technologies named after G.F. Morozov
Russia, Voronezh
e-mail: nnpan@yandex.ru
3Military Training and Research Center of the Air Force "Air Force Academy
named after Professor N.E. Zhukovsky and Yu.A. Gagarin"
Voronezh, Russia

A mathematical model of the local dose load for continuous protection in the form of a rectangular parallelepiped is obtained. The input parameters for the model are reference data on the local load for typical protection in the form of a solid sphere. The numerical analysis showed the dependence of the local dose load on the geometric dimensions of the parallelepiped. The highest value of the local dose load corresponds to the protection in the form of a cube. For a parallelepiped, the dose load can decrease up to twice the maximum value, depending on the geometry of the parallelepiped and the wall thickness. The model allows you to optimize the geometry of protection in order to reduce the local dose load while reducing the mass of protection.

Keywords: local dose load, ionizing radiation, spacecraft, continuous protection, flat limited protection, beam method, sectoring method.
17-21
Estimation of Single Event Upset Cross-Section in Static RAM for Arbitrary Neutron Spectrum, Based on Results, Obtained with Neutron Generator

M.M. Armanov, A.S. Kustov, O.V. Tkachev, K.D. Koksharova

FSUE Russian Federal Nuclear Center Academician E.I. Zababakhin
All-Russian Research Institute of Technical Physics
Snezhinsk, Chelyabinsk region, Russia
e-mail: dep5@vniitf.ru

Based on numerical simulation of neutron and high-energy ions transfer in hot area of a PRISMA program microcircuit, a connection between initial energy distribution of neutrons and distribution of secondary charged particles through linear energy transfers was gained. Using two-parameter equation, known from reference [1], connecting cross-section of a single event upset (SEU) with linear energy transfers of bombarding particles, the estimates of SEU cross-section in static RAM under the influence of arbitrary energy distribution neutrons were carried out.

Keywords: neutrons, secondary charged particles, energy distribution, static RAM, single event upset cross-section.
22-27
Study of Neutron Irradiation Impact on Temperature Dependences of Electro-optic GaAs Characteristics of Laser Diode

O.V. Tkachev1, S.M. Dubrovskih1, E.V. Smirnov1, A.S. Kustov1, I.A. Ivanova2

1FSUE Russian Federal Nuclear Center Academician E.I. Zababakhin All-Russian Research Institute of Technical Physics
Snezhinsk, Chelyabinsk region, Russia
2Snezhinsk Physics and Engineering Institute of National Research Nuclear University MEPhI
Snezhinsk, Chelyabinsk region, Russia

The results of studies of the radiation response of semiconductor laser diodes emitting at a peak wavelength of 965 nm, when the laser temperature is varied, are presented. The effect of temperature and neutron irradiation on the electro-optical characteristics of a laser diode is studied. It is shown that it is advisable to choose the threshold current at the operating temperature as a criterion parameter that determines the radiation resistance of semiconductor laser emitters.

Keywords: laser diode, threshold current, voltage-current characteristics, watt-ampere characteristics, neutron fluence.
28-32
Alpha Irradiation Impact on Reverse Voltage-Current Characteristics of Silicon Photomultipliers

D.A. Ogorodnikov1, Yu.V. Bogatyrev1, S.B. Lastovsky1, A.V. Ketko2, A.M.
Lemeshevskaya2, V.S. Tsymbal2, S.V. Shpakovsky2, P.V. Rubanov3, S.E. Lukonin3

1SA "Scientific-Practical Materials Research Centre NAS of Belarus
Minsk, Belarus
e-mail: lastov@physics.by
2JSC "Integral
Minsk, Belarus
3Tomsk Polytechnic University
Tomsk, Russia

The study results of the alpha irradiation impact on reverse voltage-current characteristics of silicon photomultipliers are presented. Its established, that most changes in reverse characteristic are observed in devices, irradiated in avalanche breakdown mode. The obtained results are explained by the impact of cumulated throughout irradiation charges in dielectric layers of isolation channels and surface states on the boundaries of these layers with p-silicon active cells.

Keywords: silicon photomultiplier, alpha-rays, radiation hardness, reverse voltage-current characteristic.
33-43
Features of Preparation and Carrying out Research of Integrated Circuit Samples in Difficult-Case Version BGA Flip-Chip

A.E. Kozyukov1, N.Yu. Shulga1, S.A. Yakovlev1, A.A. Klein1, E.V. Tkachenko2

1Affiliated enterprise of the United Rocket and Space Corporation -
Research Institute of Space Device Engineering
Moscow, Russia
e-mail: Kozyukov_AE@orkkniikp.ru
2Federal Agency Federal Research Center
Research Institute for System Studies of the Russian Academy of Sciences
Moscow, Russia

The features of testing and preparation of integrated circuits in a complex-package BGA Flip-Chip for resistance to the effects of heavy charged particles in terms of catastrophic-type failures, latch-up and the occurrence of single event upsets are presented.

Keywords: thinning of crystal wafer-plate, depackaging, silicon multichip wafer-plate, microchip tests, heavy ions, single event effects, single event upsets, radiation hardness, ionizing radiation of cosmic space, electronic component base.


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