The basic physical processes are reviewed, which take place in tracks of heavy charged ions under single event gate SiO₂ oxide rupture in power MOS transistors (MOST). Based on the analysis of the available results of experimental and theoretical research the possibility of channel generation of oxide rupture in the central core of a track in time comparable to recombination time of the resultant electron-hole pairs is shown.

The results of UHF module testing for hardness to laser radiation are outlined.

The subnanosecond electron accelerator with gas-filed shaper has been modernized and its characteristics studied at the RFNC All-Russian Institute of Experimental Physics. The upgrade has been carried in order to reduce outside dimensions, enhance durability and robustness of the accelerator. The measured half-amplitude duration of an electron radiation pulse made t_0,5 ≈ (0,22 ± 0,02) ns, current amplitude of an electron beam (1 ± 0,15) kA, peak energy of an electron ~ 900 keV.

Parameters of pulse characteristics of SKD1-01, SKD1-02, AD6, SAD1M, ADDR-S, SPPD26, SPPD26-01 and SPPD27 type detectors under the influence of bremsstrahlung or electron radiation of subnanosecond accelerator. The SAD1M, AD and ADDR type detectors have the shortest duration of pulse characteristics – t_0,5 ≈ (0,9…1,0) ns.

The results of neutron-transmutation doping of silicon single crystals grown by the float zone (FZ) method and containing nitrogen in concentration range 5•10¹⁴-2•10¹⁶ cm^-3 are considered. A discrepancy between the actual and specified values of electrical resistivity of ingots with a nitrogen concentration above about 5•10¹⁵ cm^-3 is established. The resistivity values obtained as a result of neutron-transmutation doping of ingots high in nitrogen are, on average, 20 % lower than the target values. It is assumed that the cause of the discrepancy is the formation of donor centers with the participation of nitrogen during irradiation and heat treatment.