A method is proposed for estimating the level of failure-free operation of electronic component base of various classes, based on the electrical characteristics of the device, as well as the radiation sensitivity coefficient given in the article without radiation testing. Examples of the application of the proposed method for a commercial memory chip from UTRON, a memory chip made with silicon-on-insulator technology, and a microcontroller from ATMEGA, are presented. The levels of failure-free operation of microcircuits are investigated. The electrical parameters of microcircuits are determined using an equivalent circuit.

Approaches to simulating the levels of upsets in integrated circuits (ICs) under the influence of pulsed neutron radiation caused by bulk ionization of a semiconductor structure are considered. Depending on the density of the neutron radiation flux, the ionization reaction is formed by various mechanisms. At high intensity an integrated reaction of the entire IC crystal takes place, while at low intensity single radiation effects take place. In the intermediate region single radiation effects occur against the background of the flow of relatively large ionization currents. This paper presents the results of simulating the integrated ionization reaction of an IC under various conditions, due to which failures mainly occur. It is shown that the nature of the ionization reaction of the IC depends to a large extent on the spectral composition of the radiation, and at relatively small distances from the radiation source, and on the possible accompanying gamma-ray pulse.

The modern Russian space program involves the study of deep space by automatic spacecraft, on board which radioisotope ionizing radiation sources are used to provide power at a great distance from the Sun and to maintain the thermal regime of the onboard equipment. Powerful neutron fluxes from such sources create dose ionization and non-ionization effects in the onboard equipment, as well as random single failures and failures, which can dominate as a destructive factor for the onboard equipment in comparison with the influence of ionizing radiation from outer space. Thus, an important task even at the design stage is the correct calculation of the radiation characteristics on board the spacecraft, taking into account the impact of radioisotope sources, and predicting, on this basis, the resistance of the electronic component base intended for use.

An experimental assembly has been developed that makes it possible to reduce the consequences of the negative impact of the ionizing effect on the output power of AIIIBV/Ge photoelectric conversions. A method is proposed for determining the injection annealing mode. Annealing geostationary orbit solar batteries with an injection current density (90÷100) mA/cm2 every year for no more than 5,5 hours, it is possible to obtain 43,29 % of the power gain at the end of life.

A methodology, testing products of electronic equipment for pulsed dielectric strength, allowing reducing the number of products of electronic equipment required for testing by fifty percent, is provided.

A computational approach based on experimental data is proposed for estimating the absorbed dose distribution in an extended object exposed to gamma neutron radiation from the BIGR research nuclear reactor. A comparison was made of the non-uniformity of radiation exposure both over the surface of the object and inside the sensitive area of the object with and without the use of a rotary support and without it. A significant decrease in the non-uniformity of the dose effect on the object when using a rotary support is shown.