Page.
No. 3, 2022
5-13
Method for Assessing Level of Failure-Free IC Operation Based on Electric Parameters of Microchip

A.S. Kustov1, V.S. Gryadobitov1,2

1FSUE Russian Federal Nuclear Center Academician E.I. Zababakhin
All-Russian Research Institute of Technical Physics
Snezhinsk, Chelyabinsk region, Russia
e-mail: dep5@vniitf.ru
2Snezhinsk Physical and Technical Institute of NRNU MEPhI
Snezhinsk, Chelyabinsk region, Russia

A method is proposed for estimating the level of failure-free operation of electronic component base of various classes, based on the electrical characteristics of the device, as well as the radiation sensitivity coefficient given in the article without radiation testing. Examples of the application of the proposed method for a commercial memory chip from UTRON, a memory chip made with silicon-on-insulator technology, and a microcontroller from ATMEGA, are presented. The levels of failure-free operation of microcircuits are investigated. The electrical parameters of microcircuits are determined using an equivalent circuit.

Keywords: SRAM, microcontroller, bremsstrahlung, ionizing radiation pulse, level of failure-free operation, circuit simulation, equivalent circuit method.
14-19
Simulation of Upsets in ICs under Pulsed Neutron Exposure.Part 1. Volume Ionization Effects

A.I. Chumakov1,2, D.V. Bobrovsky1,2, D.O. Titovets1,2, N.V. Garanyushkin3, S.Yu. Diankov4, V.F. Gerasimov4, K.A. Chumakov5, O.A. Gerasimchuk1

1National Research Nuclear University MEPhl
2JSC "Experimental Scientific and Production Association Specialized Electronic Systems"
Moscow, Russia, e-mail: dotit@spels.ru
3SRSI "12 Central Research Institute" of the Ministry of Defense of Russian Federation
Sergiev Posad, Moscow region, Russia
4SRSI "14 Central Research Institute" of the Ministry of Defense of Russian Federation
5FSI FRC Research Institute of System Research of the Russian Academy of Science
Moscow, Russia

Approaches to simulating the levels of upsets in integrated circuits (ICs) under the influence of pulsed neutron radiation caused by bulk ionization of a semiconductor structure are considered. Depending on the density of the neutron radiation flux, the ionization reaction is formed by various mechanisms. At high intensity an integrated reaction of the entire IC crystal takes place, while at low intensity single radiation effects take place. In the intermediate region single radiation effects occur against the background of the flow of relatively large ionization currents. This paper presents the results of simulating the integrated ionization reaction of an IC under various conditions, due to which failures mainly occur. It is shown that the nature of the ionization reaction of the IC depends to a large extent on the spectral composition of the radiation, and at relatively small distances from the radiation source, and on the possible accompanying gamma-ray pulse.

Keywords: upsets of integrated circuits, pulsed neutron radiation, ionization reaction, bulk ionization, single radiation effects, simulation, integrated ionization reaction.
20-27
Software Implementation of Calculation Procedure of Local Absorbed Doses and Structural Damage Doses in Spacecraft Equipment Taking into Account Effect of Onboard Radio and Isotope Sources

E.V. Vlasenkov

Lavochkin Science and Production Association
Khimki, Moscow region, Russia
e-mail: veb@laspace.ru

The modern Russian space program involves the study of deep space by automatic spacecraft, on board which radioisotope ionizing radiation sources are used to provide power at a great distance from the Sun and to maintain the thermal regime of the onboard equipment. Powerful neutron fluxes from such sources create dose ionization and non-ionization effects in the onboard equipment, as well as random single failures and failures, which can dominate as a destructive factor for the onboard equipment in comparison with the influence of ionizing radiation from outer space. Thus, an important task even at the design stage is the correct calculation of the radiation characteristics on board the spacecraft, taking into account the impact of radioisotope sources, and predicting, on this basis, the resistance of the electronic component base intended for use.

Keywords: software package "LoalDose&SEE", dose, ionizing effects, displacement effects, radioisotope source, space ionizing radiation, spacecraft, 3D model.
28-34
Increasing Operational Characteristics of Space Solar Battery

M.V. Ryabtseva1, I.V. Badurin1, N.T. Vagapova1,2,A.S. Petrov3, K.I. Tapero2,3, E.S. Chuyanova1,2

1JSC Scientific and Production Enterprise Kvant
Moscow, Russia
e-mail: umc@npp-kvant.ru
2National University of Science and Technology MISiS
Moscow, Russia
3JSC Research Institute of Scientific Instruments
Lytkarino, Moscow Region, Russia

An experimental assembly has been developed that makes it possible to reduce the consequences of the negative impact of the ionizing effect on the output power of AIIIBV/Ge photoelectric conversions. A method is proposed for determining the injection annealing mode. Annealing geostationary orbit solar batteries with an injection current density (90÷100) mA/cm2 every year for no more than 5,5 hours, it is possible to obtain 43,29 % of the power gain at the end of life.

Keywords: photovoltaic converter, AIIIBV semiconductor materials, injection annealing, high-energy electrons, I-V characteristic, electroluminescence spectroscopy, external quantum efficiency.
35-37
Determining Products of Electronic Equipment under Influence of Single Voltage Pulse of Direct and Reversed Polarity

V.I. Vanin

JSC "Russian Scientific Research Institute "Electronstandart
Saint Petersburg, Russia
e-mail: v-vanin@mail.ru

A methodology, testing products of electronic equipment for pulsed dielectric strength, allowing reducing the number of products of electronic equipment required for testing by fifty percent, is provided.

Keywords: products of electronic equipment, microchips, semiconductor devices, pulsed dielectric strength, single voltage pulse.
38-43
Analytical and Experimental Estimate of Absorbed Dose Distribution in Object when Conducting Tests at BIGR Research Nuclear Reactor

V.A. Kuznetsov, A.V. Silaev, S.I. Doroshchuk, N.O. Bartev, A.V. Zhirnov, N.A. Tesalovsky, A.M. Pichugin, K.V. Kozhevnikov

FSUE Russian Federal Nuclear Center All-Russian Research Institute of Experimental Physics
Sarov, Nizhny Novgorod region, Russia
e-mail: otd4@expd.vniief.ru

A computational approach based on experimental data is proposed for estimating the absorbed dose distribution in an extended object exposed to gamma neutron radiation from the BIGR research nuclear reactor. A comparison was made of the non-uniformity of radiation exposure both over the surface of the object and inside the sensitive area of the object with and without the use of a rotary support and without it. A significant decrease in the non-uniformity of the dose effect on the object when using a rotary support is shown.

Keywords: gamma and neutron radiation, Monte Carlo method, non-uniformity, absorbed dose, computational model.


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