No 4, 2022
Assessment of Radiation Hardness of Fiber Optic Lines Based on Chalcogenide Glasses

V.V. Gerasimenko1, Yu.A. Kabalnov2, A.N. Kachemtsev1, I.V. Skripachev1, A.V. Skupov2, G.E. Snopatin1, A.N. Trufanov2, N.E. Tupikov2

1Devyatykh Institute of Chemistry of High-Purity Substances of the RAS
Nizhny Novgorod, Russia
2Branch of RFNC All-Russian Research Institute of Experimental Physics
"Sedakov Research Institute of Measuring Systems"
Nizhny Novgorod, Russia, e-mail: Kabalnov@niiis.nnov.ru

The radiation hardness of arsenic sulfide fibers with a transparency window in the mid- and far-IR ranges has been studied. Changes in the optical characteristics of optical fibers under the effect of X-rays were evaluated. The calculation of the absorbed dose was performed by the Monte Carlo method based on a geometric model of the location of the optical fiber and the radiation source. When irradiated with X-ray quanta, an increase in the absorption of IR radiation was observed in the entire spectral range under study. According to the research results, it is shown that the induced losses for arsenic sulfide fibers are lower than the losses of commercially produced quartz fiber optic lines.

Keywords: fiber optics, chalcogenide glasses, IR range of wavelengths, radiation hardness, X-ray radiation, induced transmission losses.
Potentialities of Walsh-Hadamard Transform in Analysis of Error Distribution in SRAM Influenced by Pulsed Ionizing Radiation

A.S. Pilipenko1, A.S. Kustov1, L.S. Zubkov1,2

1FSUE “Russian Federal Nuclear Center – Academician E.I. Zababakhin All-Russian Research Institute of Technical Physics”
Snezhinsk, Chelyabinsk region, Russia
e-mail: A.S.Pilipenko@vniitf.ru
2Ural Fеdеrаl University named after the First President of Russia B.N. Yeltsin
Yekaterinburg, Sverdlovsk region, Russia

Error distribution features in SRAM (upset bitmaps) occurred under ? and ?-n pulsed radiation were analyzed by the use of experimental data processing with Walsh-Hadamard transform – decomposition on complete orthogonal basis of rectangle functions. Using such processing with comparison to decomposition on harmonic functions allows detecting additional regularities in error distribution. The presence of these regularities is discussed in aspect of voltage dropdown on memory cell’s conductor lines arising under the influence of pulsed radiation.

Keywords: single event upsets, SRAM, upset bitmap, neutrons, pulsed ionizing radiation.
Simulation of Failures in ICs under Pulsed Neutron Exposure. Part 2. Single Radiation Effects

A.I. Chumakov1,2, D.V. Bobrovsky1,2, A.V. Sogoyan1,2, A.A. Smolin1,2, D.O. Titovets1,2, S.Yu. Diankov4, K.A. Chumakov5, O.A. Gerasimchuk1

1National Research Nuclear University “MEPhl”
sup>2JSC "Experimental Scientific and Production Association Specialized Electronic Systems"
Moscow, Russia, e-mail: dotit@spels.ru
3SRSI "12 Central Research Institute" of the Ministry of Defense of Russian Federation
Sergiev Posad, Moscow region, Russia
4SRSI "14 Central Research Institute" of the Ministry of Defense of Russian Federation
5FSI “FRC Research Institute of System Research of the Russian Academy of Science”
Moscow, Russia

An approach towards simulating single radiation effects in ICs under the influence of neutron radiation is presented. Three energy ranges are distinguished, in each of which the energy release in a micro-volume is estimated due to various mechanisms of nuclear interactions: elastic and inelastic scattering with the formation of primary knocked-on atoms, and nuclear reactions with the formation of heavy secondary particles. A comparison with experiment is presented.

Keywords: IC upsets, pulsed neutron radiation, ionization reaction, volume ionization, single radiation effects, simulation, integrated ionization reaction.
Error Assessment in Measurement of Absorbed Dose with MOS Detector under Different Environment Temperatures

O.V. Meshchurov, R.G. Useinov

JSC "Research Institute of Scientific Instruments”
Lytkarino, Moscow region, Russia
e-mail: Niip66@bk.ru

The current-voltage characteristics and the informative parameter of MOS detectors of the absorbed dose of ionizing radiation were measured in the temperature range (–60...+60) °C after exposure to gamma radiation from a 60Co source under normal climatic conditions and a dose rate of 0,0088 rad(Si)/s. The results obtained are compared with the calibration dependence of the informative parameter of the detector on the absorbed dose. A theoretical model is proposed for the dependence of the dose measured by the detector on temperature.

Keywords: informative parameter of a detector, temperature of a detector, relative error in dose measurement, surface conditions.
Testing Electronic Equipment for Hardness to Pulsed Gamma Radiation Effect under Higher Temperature

E.Yu. Bakhmatov, S.V. Vdovin, D.V. Koynov, G.L. Pikalov, S.S. Ulkin

SRSI "12 Central Research Institute" of the Ministry of Defense of Russian Federation
Sergiev Posad, Moscow region, Russia
-mail: fgu12tsnii@mil.ru

The results of the analysis of existing methods of heating electronic products during radiation tests are presented. The possibility of using a commercially produced flexible heater in testing electronic equipment for resistance to the effects of pulsed gamma radiation of the Trans-4-1 simulator is considered. Experimental data are presented on the dynamics of heating of electronic equipment under atmospheric and vacuum conditions, as well as on the attenuation of gamma radiation by a flexible heater.

Keywords: electronic equipment, testing, pulsed gamma radiation, heating, high temperatures.

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