2009 г., Выпуск 2
|3 - 6||
V.F. Zinchenko, V.D. Shiyan, A.D. Artyomov, S.A. Sobolev
PREDICTIONS OF LOCAL DOSE LOADS IN THE CRITICAL ASSEMBLIES OF EQUIPMENT IN THE SPATIAL OBJECTS
A software complex for calculation of local dose loads in the critical assemblies of equipment in the spatial objects on exposure to ionizing radiations of the outer space was developed. Results showing effectiveness of the suggested approach by the example of predictions of the radiation condition in the volume of a spacecraft real instrument module are presented.
Keywords: dose load, spacecraft, ionizing radiation, prediction.
|7 - 9||
K.N. Yermakov, N.A. Ivanov, O.V. Lobanov, S.M. Lyubinsky, V.V. Pashuk, M.G. Tverskoy
INVESTIGATIONS ON ACTION OF THE SEPARATE HIGH ENERGY PARTICLES ON CCD MATRICES
Questions associated with development of a model of occurrence of microelectronic products failure as a result of formation of radiation damages within micro volume of a semiconductor structure by the action of separate particles are considered.
Keywords: procedure of prediction, radiation damages, failures, CCD matrices.
|10 - 14||
G.I. Zebrev, M.Y. Fedorenko. R.G. Useynov
ELECTRONIC SIMULATION OF RADIATION INDUCED LATCH IN THE MOS IC ON EXPOSURE TO SINGLE HEAVY IONS OR PULSED RADIATION
Results on electronic simulation of the radiation induced latch in the MOS IC on exposure to the single heavy ions or pulsed ionizing radiation are presented. Impact of the power line voltage depression effect by pulsed action on occurrence of the latch window effect is investigated.
Keywords: electronic simulation, ionizing radiation.
|15 - 22||
G.N. Zebrev, V.S. Anashin
GAIN OF THE ELECTRONIC COMPONENT DEGRADATION BY LOW INTENSE COSMIC RADIATION AS A DOSE RATE EFFECT
The degradation gain effect by reduction of the ionizing radiation dose rate is described and modeled as general characteristics of radiation response of oxides of distinct type electron component insulation thick layers. Approaches to the prediction of this effect in the bipolar devices are discussed.
Keywords: dose rate, degradation, ELDRS, bipolar technology, MOS IC, prediction.
|23 - 27||
DEPENDENCE OF THE SEMICONDUCTOR DEVICE PULSED ELECTRIC STRENGTH UPON LENGTH AND SHAPE OF THE AFFECTED SINGLE VOLTAGE PULSE
Dependence of the semiconductor device pulsed electric strength upon the length of a single voltage pulse in the range between 0.1 microsecond and direct voltage and upon their shape, as well on the output resistance of the pulsed generator, is analyzed.
Keywords: semiconductor devices, pulsed electric strength, heat model, heat resistance, heat capacitance, critical temperature of the junction.
|28 - 30||
V.K. Zolnikov, V.P. Kryukov, A.I. Yankov
DESIGNS OF THE INTEGRATED CIRCUITS WITH REGARD TO THE RADIATION ACTION
Methods of design of LSI with regard to the radiation are considered.
Keywords: LSI, radiation resistance.
|31 - 33||
P.P. Kutzko, Y.A. Kovalenko
SYSTEM OF COORDINATION MANAGEMENT OF THE ELECTRONIC INDUSTRY FACTORIES
Concepts of the system of coordination management of the electronic industry factories are considered.
Keywords: management, electronic industry factories.
|34 - 39||
A.A. Lebedev, A.N. Pilipenko
SIMULATIONS OF RADIATION CHARACTERISTICS OF THE DESIGNED TWO-CHANNEL OPERATIONAL AMPLIFIERS USING PSPICE SOFTWARE
Simulations of the high-speed broadband two-channel operational amplifier and its main characteristics like input currents, voltage amplification factor and transient responses by exposure to the heavy charged particles are performed.
Keywords: operational amplifier, simulation.
|40 - 42||
DEVELOPMENT OF SERIES OF THE POWER MOS-TRANSISTORS WITH HIGHER REQUIREMENTS TO THE SPECIAL COSMIC OUTER AFFECTING FACTORS
A method of manufacturing of the power MOS-transistors with higher requirements to the special and cosmic outer affecting factors is presented. It is shown that for increase in resistance of the power MOS and IGBT transistors to the special factors the gate oxide needs to grow by possible low temperature.
|43 - 44||
S.V. Gagarin, A.I. Petrov
INVESTIGATIONS ON RESISTANCE OF MONOLITHIC INTEGRAL CIRCUIT TRANSISTOR MICROWAVE GENERATORS TO THE ACTION OF THE SPECIAL FACTORS
Results of experimental investigations on resistance of arsenide-gallium monolithic IC — transistor microwave generators to the action of the special factors are outlined.
Keywords: radiation resistance, integral circuits, transistors.
|45 - 46||
P.A. Kharitonov, L.T. Chernyavsky, A.Y. Sinyutin, R.I. Shukhova
RELIABILITY INDEX OF THE AIRCRAFT MODERN CONTROL SYSTEMS
Analysis of the control system development was performed. An approach to the reliability of the aircraft modern control systems was outlined.
Keywords: reliability index, aircraft control system.
|47 - 49||
P.A. Kharitonov, S.Y. Malkov, V.V. Goncharow, P.V. Proshunin, K.P. Kharitonov
MODEL OF SECONDARY POWER SUPPLY WITH PULSE-DURATION MODULATION FOR ESTIMATION OF ITS RESISTANCE
Analysis of results of modeling of the secondary power supply СПН027-100-36 response to the action of gamma-irradiation by means of Matlab 6/5+Simulink 5/6 was performed.
Keywords: power supply, action of irradiation.
|50 - 52||
A.S. Syrov, A.V. Satsko, M.N. Dubnov, V.V. Sinelnikov, P.A. Kharitonov, V.V. Yemelyanov, V.S. Figurov, V.V. Shelkovnikov
RESULTS OF TESTS OF THE AIRBORNE DIGITAL COMPUTING SYSTEM ON RESISTANCE TO THE ACTION OF THE SPACE IONIZING RADIATION
Results of the experimental estimation of resistance of the airborne digital computing system БЦВС СИЯМ.466535.007 forming a part of the control system of spacecraft «Экспресс-МД1/МД2» to the action of the space ionizing radiation are presented.
Keywords: airborne digital computing system, ionizing radiation resistance.
|53 - 58||
A.P. Stepovik, V.S. Blinov, A.I. Kormilitsyn, V.Y. Kononenko
SPACE-ANGLE DISTRIBUTION OF ELECTRONS OF THE ИГУР-3 ACCELERATOR ON OUTPUT OF THE ACCELERATING TUBE
Results of measurements of space-angle distribution of electrons emerging from the central and peripheral regions of anode foil are presented. The measurements are performed in three azimuthally directions at 120° by different operating modes of the accelerator. It was obtained that the impact of the accelerator operating mode results in a different spatial shape of the electron beam: in focusing or in the more uniform distribution of electrons along the beam section.
Keywords: space-angle distribution, electrons, accelerator IGUR-3.
|59 - 61||
N. K. Abrosimov, Y. M. Ivanov, V. P. Koptev, G. A. Ryabov, M. G. Tverskoy, O. A. Scherbakov
ANALYSIS OF POSSIBILITY OF CREATING ON THE 1 GEV SYNCHROCYCLOTRON A NEUTRON BEAM WITH SPECTRUM RECURRING ATMOSPHERE NEUTRON SPECTRUM
Possibility of creating on the 1 GeV proton energy synchrocyclotron of ПИЯФ РАН a neutron beam to perform radiation tests was analyzed. Characteristics of the existing installation ГНЕЙС and results of calculation of the assumed neutron spectrum are compared with the neutron spectrum of WNR in Los Alamos.
Keywords: neutron pulses generation.
|62 - 64||
K.N. Yermakov, N.A. Ivanov, Y.A. Kotikov, O.V. Lobanov, A.F. Naydenkov, V.V. Pashuk, M.G. Tverskoy
IONIZATION CHAMBER WITH TRANSVERSE ELECTRIC FIELD
Some design features and results of studies on an ionization chamber with transverse relative to the beam route electric field designed to measurement of the absolute values of flow of protons with energy 1 GeV from ПИЯФ synchrocyclotron are presented.
Keywords: ionization chamber, proton flow.
|65 - 72||
A.M. Chlenov, S Y. Nozdrachev, V. N. Sinyov, Y. P. Bakulin, D. K. Kotov, A. V. Grunin, A. M. Kormilitsyn
UNIFIED APPROACHES TO THE METROLOGICAL SUPPORT OF MEASUREMENT OF THE HIGH-INTENSITY PHOTON RADIATION OF THE ACCELERATORS USED FOR RADIATION TESTS
The system for metrological support presented in RISI allowed choosing unified approaches to the measurement of the high-intensity radiation of modeling devices based on the pulse accelerators operating in the leading centers of radiation tests of electronic equipment and elements.
Keywords: metrological support, radiation tests.
|73 - 80||
B.Y. Bogdanovich, V.Y. Kalyuzhny, E.S. Masunov, A.V. Nesterovich, A.G. Ponomarenko, V.A. Senyukov
CONCEPT OF MOBILE SOURCE OF NARROW GAMMA RADIATION
A concept of the mobile source of narrow gamma-radiation on the basis of an electron accelerator with electron energy until 300-500 MeV and a convertor is proposed. Mobility of the source is conditioned by reduction of mass and longitudinal dimensions of the accelerator through special choice of the acceleration concept: operation by stored energy, increase of the supply power by decrease of the pulse duration, optimization of the accelerating structure and modification of the microwave power system.
Keywords: electron accelerator, converter, gamma-radiation, radiation resistance.