English






.

3, 2011 .

5-10
Methodical singularities of electronics tests to single event effects stability in heavy charged particles beams of accelerator complex TVN ITEP

V.F. Zinchenko, K.V. Lavrentev, V.N. Ulimov, R.G. Useinov, N.N. Alexeyev

The main problems and offered approaches to their decision by electronics tests to single event effects stability at space heavy charged particles treatment using accelerator complex TVN ITEP are considered
Keywords: single event effects, electronics, heavy charged particles, space, ion beams, synchrotron, simulation
11-16
Calculation of section SEU in the modern microelectronics account of ion power fluctuations (straggling) in sensitive volume of the chip cell

R.G. Useinov, G.I. Zebrev

The methodology of calculation of soft single failure sections in the modern chips taking into account power fluctuations (straggling) at ion transit through cell sensitive volume is considered. The formulas are calculated showing that straggling can appreciably influence on sections of failures in subthreshold regions of dependence of section of failure from the linear energy transfer (LET). This effect is qualitatively coordinated with watched in experiment dependences of sections of failures on energy and ion type at identical LET values of this ion
Keywords: single failures, straggling, section of failures
17-21
Estimation of reliability indexes of electronic component base by degradation coefficient

V.I. Vanin

The method of estimation of results of burn-in testing of on degradation coefficient and an estimation of reliability indexes of electronic component base without failures during tests is offered
Keywords: degradation coefficient, variation coefficient, failure probability, failure intensity, gamma-percentile life
22-25
Fabrication technique of coordinate detectors

V.N. Murashev, S.A. Legotin, A.S. Korolchenko, M.N. Orlova

Different constructions and fabrication techniques of coordinate semi-conductor detectors, and also original process flow and detector design which allows to receive record quality parameters for the coordinate detector, i.e. the maximum time resolution of 100 nanoseconds, coordinate resolution isn\´t worse 10 microns and spectral response isn\´t worse 1 keV are described. The developed construction of integrated circuit represents new type of detectors – detectors «CMOS VLSI», not demanding external electronics
Keywords: CMOS, VLSI, monolithic detector, silicon, fabrication technique.
26-30
Methods of microregime autogeneration in tasks of control of reliability and chip resistance to action of space factors

V.N. Ustyuzhaninov

Theoretical bases of ring oscillators and advantage of self-refresh modes to determination of indexes of reliability and IC resistance to radiation treatment and space radiations are considered. Resolution enhancement and diagnostic possibilities of control techniques providing use of self-refresh modes with supply under voltages are justified
Keywords: space radiations, radiation IC resistance, resistance quality monitoring, ring oscillator.
31-36
Theoretical bases of IC regime-dynamic reliability control at action of external factors

V.N. Ustyuzhaninov, V.I. Butin, T.N. Frolova

Regularities of shaping of IC electrical response to pulse energetic actions of various physical nature are considered. Dominating system mechanisms of shaping of electrical responses to external actions in bipolar semi-conductor microstructures are defined. Possibility of development and application of techniques of selection of reliable electronic components as a part of batch with use of pulse actions of various physical nature is justified
Keywords: chips, pulse actions, electrical response, reliability estimations
37-40
Microregime techniques of screening of electronic component base for spacecrafts with long active lifetime

V.N. Ustyuzhaninov

Possibility, expediency and efficiency of application of techniques of control of mode reliability and IC resistance to action of space factors with use as criteria parameters of microregime operation are justified
Keywords: radiation, reliability, spacecraft, active lifetime
41-45
Comparative study of influence of different types of ionizing radiation on degradation of optoelectronic switches

O.V. Meshchurov, K.I. Tapero

The degradation of optoelectronic switches 2491 at treatment of proton with energy of 20,7 MeV and reactor neutrons is researched. It is shown that degradation of such switches is defined both structural, and ionization effects
Keywords: optocoupler, ionizing radiation, fast neutrons, high-energy protons
46-51
Research of degradation GaAs/Ge solar cells owing to radiation-induced effects of structural damages

K.I. Tapero, G.V. Demidas, I.V. Shchemerov

Degradation of characteristics single-junction heterostructure GaAs/Ge solar cells owing to structural damages formed at fast neutron radiation is researched. The calculated estimation of degradation of such solar cells depending on fluence of protons with energy of 10 MeV is calculated
Keywords: solar cells, structural damages, fast neutrons
52-54
The analysis of onboard measurements of space ionizing radiation characteristics at dose radiation

V.S. Anashin, S.V. Balashov, I.O. Ishutin, G.A. Protopopov

The analysis of onboard measurements of cumulative dose which are received by the sensors of integrated cumulative dose placed on different spacecrafts of system GLONASS is presented. The flight data is compared with design values of cumulative dose, the not-monotonicity of dose rise time is marked
Keywords: ionizing radiation, cumulative dose, onboard measurements
55-57
Problems of support of calculation accuracy of space ionizing radiation influence on electronic component base regarding of dose effects

V.S. Anashin, G.A. Protopopov

The software for calculation of space ionizing radiation influence on electronic component base regarding dose effects with shield from any material is considered
Keywords: ionizing radiation, cumulative dose, software
58-63
Research of influence of radiation-thermal treatment on space ionizing radiation resistance of microcontrollers ATmega128 regarding dose effects

V.S. Anashin, A.V. Lebedev, N.G. Radovsky, P.A. Chubunov, I.I. Shagurin

For estimation of using possibilities of ATmega microcontrollers in spacecraft onboard systems they are tested for ionizing radiation resistance regarding dose effects. Research of influence of radiation-thermal treatment on characteristics of tested samples is conducted
Keywords: radiation resistance, radiation-thermal treatment, functional diagnostics, microcontroller
64-71
Problems of support of radiation resistance and reliability of electronic component base for space onboard equipment

L.S. Andrianov, S.N. Gerasimov, A.G. Kadmensky

The system of forecasting of radiation reliability and resistance of electronic component base onboard spacecrafts that allows to optimize selection of nano- and submicron product parts for equipment of long-term operation in orbit is considered
Keywords: radiation resistance, onboard equipment, spacecraft
72-75
Development of multi-channel programmed start signal generators for low-voltage synchronization systems of heavy-current pulse electron accelerators

B.V. Tsigankov

Results of development of multi-channel programmed start signal generators for synchronized start of different subsystems of heavy-current pulse electron accelerators are presented
Keywords: electron accelerator, synchronization system, start signal generator
76-79
The main stages of resistance support of space system equipment to integrated dose effects

V.F. Zinchenko, K.V. Lavrentev, A.K. Lipsky, R.G. Useinov, N.N. Bulgakov, L.J. Saharova

The main development cycles of space system equipment with the given resistance level to integrated dose effects at space ionizing radiation are considered
Keywords: radiation resistance, spacecraft, ionizing radiation
80-83
Forecasting of probability of single event effects in space equipment at single charged particles treatment

V.F. Zinchenko, K.V. Lavrentev, A.K. Lipsky, R.G. Useinov, N.N. Bulgakov, L.Yu. Saharova

The main evaluation stages of probability of single event effects in space equipment at treatment of single heavy charged particles and space highly-energy protons are considered
Keywords: space equipment, radiation resistance, single events
84-88
The integrated circuit of quantum coordinate detector on the basis of matrix of the bipolar functional-integrated structures

V.N. Murashev, S.A. Legotin, D.E. Karmanov

The construction and architecture of the integrated circuit (VLSI) of new type – quantum pixel coordinate detector are described. An important singularity of such detector is implementation in one construction of «recording» pixel array and readout CMOS-electronics, combine on interface with personal computer. The operating principle of VLSI detector is shown and detector response and high-speed performance are theoretical estimated.
Keywords: CMOS, VLSI, «flip-chip», monolithic detector, architecture, fabrication technique, detector topological layout.
89-94
Influence of external energetic factors on thermo physical and radiation characteristics of pulse cesium discharge

S.V. Gavrish

The questions of influence on parameters of pulse cesium discharge of returned self-radiation and increase of lamp electrical power are theoretically considered and by spectral-optical methods experimentally researched. It is shown that reset of self-radiation to plasma leads to transformation of radiation spectrum. The increase of electrical power doesn\´t influence on glow spectral content, but leads to energy output increase in the middle IR-spectrum. In both cases the vapor pressure of plasma-supporting environment is increased. Mechanisms of this phenomenon are considered
Keywords: plasma, peak radiation intensity, electrical power, plasma absorption coefficient, optical density, reflector, mathematical model
95-100
Radiation processes in pulse lamps with inert-metal plasma-supporting environments

S.V. Gavrish

On the basis of mathematical model determine main factors, defining ultraviolet radiant parameters of lamps with sapphire jacket. Calculations are for cesium-mercury-xenon mix and for pure xenon. Dependence of jacket radiation-optical stability on sapphire structural perfection is shown. Lowering of the induced absorption in discharged lamp jackets in the course of operating time is detected
Keywords: pulse lamps, plasma, mathematical model
101-105
Research of temporal dependence of radiation processes in high pressure pulse discharges

S.V. Gavrish

Radiation processes at formation of discharge column, establishment of its quasistationary state and plasma relaxation are considered. Spectral characteristics of discharge radiation during the different time and dependence of radiation pulse duration on wavelength are analyzed
Keywords: pulse discharge, radiation processes, quasistationary discharge, spectral distribution, plasma absorption coefficient, discharge current, voltage
106-110
Diamond dosimeter of pulse bremsstrahlung 1

M.A. Bublik, K.N. Danilenko, V.P. Dronyaev, O.V. Melnik, B.K. Mikheev, A.V. Grunin, E.N. Krylevsky, N.A. Kuimova, S.A. Lazarev, T.V. Loyko

Results of design development of diamond dosimeters of pulse bremsstrahlung 1 operating in analog mode of conversion of this radiation intensity in electric current which is transferred on communication line to high-speed devices of analog information recording are described
Keywords: diamond dosimeter, pulse bremsstrahlung
111-116
Problems of dosimetry of the pulse electron radiation of accelerator ARSA

N.I. Terentyev

Preliminary research of electronic radiation of accelerator ARSA for possibility of its certification is conducted. Some types of measuring means, generally, non-standard are used. Radiation dose space distributions with distance 0 to 100 sm from output window are defined. Stability of radiation yield is 15-20 % on 12 starts. The estimation of absorption radiation energy in film dosimeters CO ()–5/50 and TLD stubs of PGT type of 0,2 mm in the thickness has values from 0,55 MeV (maximum – at window) to 0,33 MeV (extrapolated – on 40 sm). The pulse waveform of electron flux density by electron detector of collector type (1) and absorbed dose rate by diamond detectors is measured. Pulse half-amplitude duration is 1,5-3 nanoseconds. Questions of dosimetry of electron radiation of accelerator ARSA are considered
Keywords: pulse accelerator, diamond detector, dose