




Ñòð.  Âûïóñê 4, 2011 ã.
 512

The calculated method of estimation of resistance of bipolar devices to lowdoserate ionizing radiation and use of conversion model
V.S. Pershenkov, A.S. Bakerenkov, S.A. Varlamov, V.V. Belyakov, V.A. Lapshinsky
The exponent m of exponential function used in domestic calculated techniques (regulatory document ÐÄ Â 319.03.372000 and industry standard of Russian space agency ÎÑÒ 134) for estimation of resistance of bipolar integrated chips to lowdoserate space radiation is calculated. This calculation is fulfilled with use of analytical relation following from conversion model of lowdoserate effect in bipolar devices. It is shown that application of generalpurpose value of exponent m = 0,26 isn\´t experimentally verified for most tested devices
Keywords: method, ionizing radiation, bipolar devices, conversion model
 1316

Method of the automated circuit simulation of effects of heavy charged particle action on the modern CMOS IC
I.A. Danilov, B.V. Vasilegin, P.N. Osipenko
The method of the automated circuit simulation of effects of heavy charged particle action on the modern CMOS IC is developed, allowing essentially to reduce time spending for detecting of IC nodes which are critical regards considered effects
Keywords: simulation, radiation resistance, heavy charged particles, CMOS IC
 1722

The calculation program of absorbed doses by MonteCarlo simulation
P.R. Gilvanov, A.B. Petuhov, A.S. Cheberyaka
The program DoseMC for calculation of absorbed doses of electrons, protons, ions, neutrons and gamma Xray radiation in the flat, spherical and modified threedimensional geometry by MonteCarlo simulation is developed. The program is developed in Windows on the Geant4 software.
Keywords: ionizing radiation, absorbed dose, MonteCarlo simulation, Geant4
 2326

Calculation technique of space electronics equipment reliability at heavy charged particles treatment
P.R. Gilvanov, A.F. Naidanov, A.B. Petuhov
The calculation technique of space electronics equipment reliability at space heavy charged particles treatment is presented. The nonfailure operation probability of digital data processing unit of spacecraft at heavy charged particles treatment is estimated. The circuit solutions to nonfailure operation probability increase to demanded level 0,95 are offered
Keywords: reliability, nonfailure operation probability, heavy charged particles
 2738

The integral response of electronics at analog pulse ionizing radiation and its applications
V.S. Figurov
Substantiations of the main practical applications of integral response of tested product at pulse ionizing radiation on analog parameters of products q are resulted. The main applications are: an estimation of range of applicability of linear approximation at response description q(t), effective duration of this response, determination of minimum possible level of nonfailure operation on parameter q at all possible forms of pulse ionizing radiation, usage of this product as a dosimeter and at estimations of the relative radiation efficiency of various simulators, an estimation of the energy selected in a product with an ionization current at pulse ionizing radiation
Keywords: integral response, pulse ionizing radiation, relative efficiency, ionization currents, pulse dose, minimal levels of nonfailure operation, integrators
 3951

Estimation of effective spectral coefficient of neutron radiation in distant points of accelerator BARS4 radiation field
V.S. Figurov, V.V. Baykov, V.V. Shelkovnikov, A.V. Vasilev, M.V. Sushko
The method of experimental determination of effective spectral coefficient of neutron radiation q_{0,1}_{ýôô}_{ }in distant point of accelerator BARS4 radiation field is tried out. Value q_{0,1}_{ýôô}_{ }is defined by measurement results of dependences h_{21}_{Ý} (Ô_{3,0}) for the bipolar transistor 2Ò203Á in distant point of accelerator radiation field and in point with the certified value of spectral coefficient q_{0,1}. The estimation q_{0,1}_{ýôô} in distant point of accelerator BARS4 radiation field allows to test the silicon products with low structural damage resistance using tracking detectors ^{32}S. Nonlinearity of dependence h_{21}_{Ý} (Ô_{3,0}) is defined and its shaping model is offered
Keywords: neutron radiation, spectral factor, efficiency of neutron radiation, nonlinearity
 5260

Research of dependence of dose rate from time at lifting and lowering of accelerator GU200 sources
V.S. Figurov, V.V. Baykov, V.V. Shelkovnikov, O.T. Kustikov, T.A. Baranova, E.N. Danilovich
Dependence of dose rate from time P_{g}(t) at lifting and lowering of GU200 sources are researched. It is shown that character of this dependence in a specific point of radiation field is defined by removal of this point from the casing of accelerator exposure sources, its elevation over work table and, generally, loading by simultaneously tested samples. The method of operative estimation and the registration of value of effective time of source liftinglowering for a specific point of radiation field are tried out, the representative values of this time are defined
Keywords: accelerator GU200, effective time of source lifting, test dosimetry
 6171

Estimation of variation of accelerator GU200 photon radiation efficiency within its test box
V.S. Figurov, V.V. Baykov, V.V. Shelkovnikov, O.T. Kustikov, T.A. Baranova, E.N. Danilovich
Experimentally under integrated responses of ionization current of photodiode FD24, the powerful diode 2D213 with copper heat sink and chips 5584IR8T to quasimomentums of accelerator GU200 photon radiation are defined estimations of variation of efficiency of this radiation within accelerator test box for silicon products. The estimation of influence of the doublelayer PlAlcontainer (external layer ~2,0 mm Pb, inside layer ~0,8 mm Al) on radiation efficiency of accelerator GU200 is defined
Keywords: radiation efficiency, accelerator GU200, radiation quasimomentum, integrated responses, doublelayer container
 7282

Experience of sharing of accelerators RIUS5 and UIN10 for reliable results of electronics pulse ionizing radiation resistance tests
V.S. Figurov, V.N. Ulimov, V.V. Baykov, V.V. Shelkovnikov, N.S. Bolnyh, A.P. Metelev, A.A. Fedorov
It is shown that sharing of accelerators RIUS5 and UIN10 allows to estimate the levels of electronics threshold failures at pulse ionizing radiation with the given (typical) pulse waveform, and also to estimate time of loss of functionality of tested products at radiation with given pulse dose (to ~3·10^{4}). The experimental estimation of the relative efficiency of photon radiations of accelerators RIUS5 and UIN10 for microcircuit 564LÀ7 is made.
Keywords: effective relaxation time, threshold failures, loss of functionality time, pulse dose, test reliability.
 8392

Technique of experimental estimation of relative efficiency of pulse ionizing radiation at nonlinear dependence of product integrated responses from pulse dose value
V.S. Figurov
The technique of experimental estimation of relative efficiency of pulse ionizing radiation of different simulators by results of integrated responses determination of tested product on influence of simulator radiation pulses at nonlinear dependence of these responses from pulse dose value is tried out. The method is tried out at chip 1485ÕÊ4Ò test on accelerators RIUS5 and ARSA
Keywords: relative efficiency of photon radiations, nonlinearity of responses
 93106

Estimation of dependence of chip 1620ÐÅ4Ó999 response to the current consumption on pulse ionizing radiation from pulse waveform of this radiation
V.S. Figurov, V.V. Baykov, V.V. Shelkovnikov, N.S. Bolnyh
On the basis of ROM chip 1620ÐÅ4Ó999 test results the technique of an estimation of dependence of chip ionization current consumption with high equivalent capacitance from an ionizing radiation pulse waveform is tried out. It is shown that the registration of this dependence is necessary for uniformity and reliability of results of LSI SOI radiation resistance tests
Keywords: LSI SOI, ionization current consumption, radiation pulse waveform
 107116

Research of LED 3Ë139ÁÌ ÎÑÌ resistance to discomposition effects at proton and electron space radiations
V.S. Figurov, V.V. Baikov, V.V. Shelkovnikov, A.V. Gradoboev, P.V. Rubanov, S.A. Avdyushkin, A.V. Yurchenkov
The technique of determination by test results on accelerator BARS4 of real (limiting) LED resistance to discomposition effects is tried out. Real resistance of LEDs 3Ë139ÁÌ ÎÑÌ to discomposition effects at radiation with the characteristic 7È_{1} (Ô_{0,1}_{ïð}, unit/sm^{2}), proton radiation with energy of 10 MeV (Ô_{ïð}_{ }_{ïð} (Å = 10 MeV), proton·sm^{2}) and on constituent of absorbed dose of proton and electron space radiations is defined
Keywords: LED resistance, discomposition effect, proton and electron radiations
 117122

To the question of shielding influence on pulse waveform of simulator photon radiation
V.S. Figurov
The influence of shielding objects on effective pulse duration of accelerator RIUS5 photon radiation by results of determination the effective response duration of chip 537ÐÓ6 on consumption current and diode 2Ä103À on reverse current to pulses of this accelerator at their radiation without shielding and at shielding by the communicationselectronics equipment unit and an aluminum plate is preliminary estimated. It is shown that for uniformity of test results is necessary the standard pulse ionizing radiation simulator, and also standard measuring instruments of main pulse ionizing radiation characteristics  values of pulse dose and radiation pulse waveform
Keywords: pulse ionizing radiation waveforms, standard simulator, standard measuring instruments






