Стр. | Выпуск 4, 2011 г. |
5-12 |
The calculated method of estimation of resistance of bipolar devices to low-dose-rate ionizing radiation and use of conversion model
V.S. Pershenkov, A.S. Bakerenkov, S.A. Varlamov, V.V. Belyakov, V.A. Lapshinsky The exponent m of exponential function used in domestic calculated techniques (regulatory document РД В 319.03.37-2000 and industry standard of Russian space agency ОСТ 134) for estimation of resistance of bipolar integrated chips to low-dose-rate space radiation is calculated. This calculation is fulfilled with use of analytical relation following from conversion model of low-dose-rate effect in bipolar devices. It is shown that application of general-purpose value of exponent m = 0,26 isn\´t experimentally verified for most tested devices Keywords: method, ionizing radiation, bipolar devices, conversion model |
13-16 |
Method of the automated circuit simulation of effects of heavy charged particle action on the modern CMOS IC
I.A. Danilov, B.V. Vasilegin, P.N. Osipenko The method of the automated circuit simulation of effects of heavy charged particle action on the modern CMOS IC is developed, allowing essentially to reduce time spending for detecting of IC nodes which are critical regards considered effects Keywords: simulation, radiation resistance, heavy charged particles, CMOS IC |
17-22 |
The calculation program of absorbed doses by Monte-Carlo simulation
P.R. Gilvanov, A.B. Petuhov, A.S. Cheberyaka The program Dose-MC for calculation of absorbed doses of electrons, protons, ions, neutrons and gamma X-ray radiation in the flat, spherical and modified three-dimensional geometry by Monte-Carlo simulation is developed. The program is developed in Windows on the Geant4 software. Keywords: ionizing radiation, absorbed dose, Monte-Carlo simulation, Geant4 |
23-26 |
Calculation technique of space electronics equipment reliability at heavy charged particles treatment
P.R. Gilvanov, A.F. Naidanov, A.B. Petuhov The calculation technique of space electronics equipment reliability at space heavy charged particles treatment is presented. The non-failure operation probability of digital data processing unit of spacecraft at heavy charged particles treatment is estimated. The circuit solutions to non-failure operation probability increase to demanded level 0,95 are offered Keywords: reliability, non-failure operation probability, heavy charged particles |
27-38 |
The integral response of electronics at analog pulse ionizing radiation and its applications
V.S. Figurov Substantiations of the main practical applications of integral response of tested product at pulse ionizing radiation on analog parameters of products q are resulted. The main applications are: an estimation of range of applicability of linear approximation at response description q(t), effective duration of this response, determination of minimum possible level of non-failure operation on parameter q at all possible forms of pulse ionizing radiation, usage of this product as a dosimeter and at estimations of the relative radiation efficiency of various simulators, an estimation of the energy selected in a product with an ionization current at pulse ionizing radiation Keywords: integral response, pulse ionizing radiation, relative efficiency, ionization currents, pulse dose, minimal levels of non-failure operation, integrators |
39-51 |
Estimation of effective spectral coefficient of neutron radiation in distant points of accelerator BARS-4 radiation field
V.S. Figurov, V.V. Baykov, V.V. Shelkovnikov, A.V. Vasilev, M.V. Sushko The method of experimental determination of effective spectral coefficient of neutron radiation q_{0,1}_{эфф}_{ }in distant point of accelerator BARS-4 radiation field is tried out. Value q_{0,1}_{эфф}_{ }is defined by measurement results of dependences h_{21}_{Э} (Ф_{3,0}) for the bipolar transistor 2Т203Б in distant point of accelerator radiation field and in point with the certified value of spectral coefficient q_{0,1}. The estimation q_{0,1}_{эфф} in distant point of accelerator BARS-4 radiation field allows to test the silicon products with low structural damage resistance using tracking detectors ^{32}S. Nonlinearity of dependence h_{21}_{Э} (Ф_{3,0}) is defined and its shaping model is offered Keywords: neutron radiation, spectral factor, efficiency of neutron radiation, nonlinearity |
52-60 |
Research of dependence of dose rate from time at lifting and lowering of accelerator GU-200 sources
V.S. Figurov, V.V. Baykov, V.V. Shelkovnikov, O.T. Kustikov, T.A. Baranova, E.N. Danilovich Dependence of dose rate from time P_{g}(t) at lifting and lowering of GU-200 sources are researched. It is shown that character of this dependence in a specific point of radiation field is defined by removal of this point from the casing of accelerator exposure sources, its elevation over work table and, generally, loading by simultaneously tested samples. The method of operative estimation and the registration of value of effective time of source lifting-lowering for a specific point of radiation field are tried out, the representative values of this time are defined Keywords: accelerator GU-200, effective time of source lifting, test dosimetry |
61-71 |
Estimation of variation of accelerator GU-200 photon radiation efficiency within its test box
V.S. Figurov, V.V. Baykov, V.V. Shelkovnikov, O.T. Kustikov, T.A. Baranova, E.N. Danilovich Experimentally under integrated responses of ionization current of photodiode FD-24, the powerful diode 2D213 with copper heat sink and chips 5584IR8T to quasimomentums of accelerator GU-200 photon radiation are defined estimations of variation of efficiency of this radiation within accelerator test box for silicon products. The estimation of influence of the double-layer PlAl-container (external layer ~2,0 mm Pb, inside layer ~0,8 mm Al) on radiation efficiency of accelerator GU-200 is defined Keywords: radiation efficiency, accelerator GU-200, radiation quasimomentum, integrated responses, double-layer container |
72-82 |
Experience of sharing of accelerators RIUS-5 and UIN-10 for reliable results of electronics pulse ionizing radiation resistance tests
V.S. Figurov, V.N. Ulimov, V.V. Baykov, V.V. Shelkovnikov, N.S. Bolnyh, A.P. Metelev, A.A. Fedorov It is shown that sharing of accelerators RIUS-5 and UIN-10 allows to estimate the levels of electronics threshold failures at pulse ionizing radiation with the given (typical) pulse waveform, and also to estimate time of loss of functionality of tested products at radiation with given pulse dose (to ~3·10^{4}). The experimental estimation of the relative efficiency of photon radiations of accelerators RIUS-5 and UIN-10 for microcircuit 564LА7 is made. Keywords: effective relaxation time, threshold failures, loss of functionality time, pulse dose, test reliability. |
83-92 |
Technique of experimental estimation of relative efficiency of pulse ionizing radiation at non-linear dependence of product integrated responses from pulse dose value
V.S. Figurov The technique of experimental estimation of relative efficiency of pulse ionizing radiation of different simulators by results of integrated responses determination of tested product on influence of simulator radiation pulses at non-linear dependence of these responses from pulse dose value is tried out. The method is tried out at chip 1485ХК4Т test on accelerators RIUS-5 and ARSA Keywords: relative efficiency of photon radiations, nonlinearity of responses |
93-106 |
Estimation of dependence of chip 1620РЕ4У-999 response to the current consumption on pulse ionizing radiation from pulse waveform of this radiation
V.S. Figurov, V.V. Baykov, V.V. Shelkovnikov, N.S. Bolnyh On the basis of ROM chip 1620РЕ4У-999 test results the technique of an estimation of dependence of chip ionization current consumption with high equivalent capacitance from an ionizing radiation pulse waveform is tried out. It is shown that the registration of this dependence is necessary for uniformity and reliability of results of LSI SOI radiation resistance tests Keywords: LSI SOI, ionization current consumption, radiation pulse waveform |
107-116 |
Research of LED 3Л139БМ ОСМ resistance to discomposition effects at proton and electron space radiations
V.S. Figurov, V.V. Baikov, V.V. Shelkovnikov, A.V. Gradoboev, P.V. Rubanov, S.A. Avdyushkin, A.V. Yurchenkov The technique of determination by test results on accelerator BARS-4 of real (limiting) LED resistance to discomposition effects is tried out. Real resistance of LEDs 3Л139БМ ОСМ to discomposition effects at radiation with the characteristic 7И_{1} (Ф_{0,1}_{пр}, unit/sm^{2}), proton radiation with energy of 10 MeV (Ф_{пр}_{ }_{пр} (Е = 10 MeV), proton·sm^{-2}) and on constituent of absorbed dose of proton and electron space radiations is defined Keywords: LED resistance, discomposition effect, proton and electron radiations |
117-122 |
To the question of shielding influence on pulse waveform of simulator photon radiation
V.S. Figurov The influence of shielding objects on effective pulse duration of accelerator RIUS-5 photon radiation by results of determination the effective response duration of chip 537РУ6 on consumption current and diode 2Д103А on reverse current to pulses of this accelerator at their radiation without shielding and at shielding by the communications-electronics equipment unit and an aluminum plate is preliminary estimated. It is shown that for uniformity of test results is necessary the standard pulse ionizing radiation simulator, and also standard measuring instruments of main pulse ionizing radiation characteristics - values of pulse dose and radiation pulse waveform Keywords: pulse ionizing radiation waveforms, standard simulator, standard measuring instruments |