English






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1, 2012 .

5-8
Rated-experimental method for determination of absorbed energy of X-ray radiation of ATM type devices in sensitive volume of irradiated electronics

V.F. Zinchenko, A.A. Romanenko, N.I. Terentev, V.N. Ulimov, E.V. Mitin

The method for determination of the absorbed energy of X-ray radiation of the ATM type device in sensitive volume of irradiated electronics is offered. The experimental method at comparing of radiation results of the powerful MOS-transistor on gamma installation with 60 source and on X-ray unit ATM 300-5 with average photon energy 78 keV is checked.
Keywords: X-ray radiation, dose effects, simulation, electronics, space.
9-15
Complex of programs for calculation of space ionizing radiation characteristics after transfer the protection of different geometry

V.F. Zinchenko, A.A. Romanenko, V.M. Uzhegov

The complex of programs for simulation of transfer of space ionizing radiation in protection of arbitrary geometry is developed. These programs allow to receive quickly all necessary information on characteristics of ionizing radiation field in spacecrafts for prediction of radiation resistance of electronic components and instruments of onboard equipment in the given space conditions.
Keywords: spacecraft, ionizing radiation, absorbed energy, Monte-Carlo technique, calculation, complex of programs.
16-20
Forecasting method of resistance factors of semi-conductor devices to transient ionization effects action

N.N. Panyushkin

The forecasting method of resistance factors of integrated microcircuits and semi-conductor devices to transient ionization effects action by test results on small-scale simulators is considered. Results of simulation are compared to experiment for bipolar integrated microcircuits.
Keywords: dose rate, pulse duration, integrated circuit, p-n-junction, transistor, ionization current, lifetime, mobility, output high-level voltage.
21-26
Parametric forecasting of resistance factors of bipolar instruments to action of ionizing radiation long-term effects

N.N. Panyushkin

The method of parametric forecasting of resistance factors of bipolar instruments to action of long-term radiation effects is offered. Predicting parameters are defined by original values of active element gain. The numerical and physical experiments are resulted.
Keywords: integrated circuit, functional cell, bipolar transistor, radiation effect, gain factor, lifetime, output low-level current, output low-level voltage.
27-31
Radiation resistance assurance of various MOS device types

F.P. Korshunov, Yu.V. Bogatyrev, S.B. Lastovsky, A.S. Turtsevich, S.V. Shwedov

Results of researches of gamma radiation 60 influence on parameters of three types of radiation-resistant MOS devices are presented: test MOS transistors – elements of submicron (0,35 microns) CMOS integrated circuits; test MOS/SOI transistors – elements of CMOS/SOI integrated circuits; powerful n-channel MOS transistors IFP830.
Keywords: MOS devices, elements of CMOS integrated circuits, gamma radiation, radiation resistance.
32-36
Determination of linear energy transfer of high-energy ions in sensitive volume of electronics at resistance tests to single event effects

V.F. Zinchenko, K.V. Lavrentyev, A.K. Lipsky

The calculated-experimental method of determination of linear energy transfer of high-energy ions in sensitive volume of modern electronic components at resistance tests to single event effects is offered. The method is based on correlation between the amplitude of photocurrent excited in semiconductor items by pulse ion beam, and by linear energy transfer of ions in device sensitive volume.
Keywords: electronics, linear energy transfer, high-energy ions, resistance tests, single event effects.
37-42
Gamma radiation influence on conductivity silicon layer in SOS structures

V.G. Goryachev, K.L. Enisherlova

The electrical conductivity transformation of silicon layers in «silicon-on-sapphire» structures (SOS) at gamma radiations in the dose range 1,104-1,6·106 R is analyzed. The considerable changes of SOS structure electrical conductivity at radiation in indicated dose range are defined. It is shown that these dose changes can have non-monotonic mode. It is shown that isochronal annealing at = 300° provides annealing of the majority of defects induced by radiation and resulted in electrical conductivity increase.
Keywords: SOS structures, ionizing radiation, gamma radiation, electrical conductivity, epitaxial film, voltage current characteristics.
43-45
The analysis of change of surface-state density in MOS devices at gamma radiations in wide range of dose rate

I.I. Katerinich, V.D. Popov, hzho Co Vin

Results of radiation tests of MOS-transistors in wide range of dose rate are analyzed. Two component of surface-state density change are revealed.
Keywords: MOS-transistor, surface states, dose.
46-50
Mathematical simulation of semi-conductor elements and functioning of circuits on their basis after the neutron radiation

A.S. Averyaskin, A.V. Hananova

The registration method of neutron radiation influence on electronic components by change of their models parameters is considered. Results of simulation of sections of circuits on the basis of created models of semi-conductor diode and bipolar transistor are presented.
Keywords: mathematical model, radiation effects, bipolar transistor, semi-conductor diode.
51-52
Radiation resistance of high-voltage bipolar transistors, the reached results

V.A. Lebedev, M.D. Prezhentsev, V.A. Chernechkov

The current state of high-voltage transistors resistance to neutron radiation influence is considered. The new constructive-technological variant of the high-voltage transistor is developed, the reached results on test transistor samples are described. Parameters of production and pre-production models are compared.
Keywords: high-voltage transistors, radiation resistance, neutron radiation.
53-60
About supercomputing simulation of electromagnetic field with selection of leading edge

A.V. Berezin, A.S. Vorontsov, A.A. Kryukov, V.M. Kuvshinnikov, M.B. Markov, B.D. Plyushchenkov, V.V. Rudenko

The mathematical model of electromagnetic field generated by penetrating radiation in the air is considered. The invariant development of Maxwell\´s equations in proper time of radiation edge is briefly stated. Problems of space normalization of the Goursat task solution for Maxwell\´s equations are specified. The numerical algorithm of solution is offered, its properties are researched. Singularities of algorithm realization for parallel supercomputers with distributed memory are stated.
Keywords: penetrating radiation, electromagnetic field, proper time, Invariant development, seminorm, difference equation, linear equation system, precondition, iteration, multisequencing, distributed memory.
61-63
The monitor of pulse beams of electrophysical radiation sources

A.A. Altukhov, V.A. Kolyubin, S.. Lvov, I.N. Osipov, M.G. Sitnikov

Researchers are conducted and the measurement technique of intensity and energy spectrum of ionizing radiation beam with time resolution of 1 nanosecond is described. By operation was used the pulse diamond detector.
Keywords: diamond detector, time resolution, nanosecond, instantaneous spectrum.
64-65
Influence of electrical operating mode on dose degradation of measuring accuracy of    temperature sensors DS18B20

M.Yu. Nikiforova, V.D. Popov, N.M. Hamidullina

Results of researches of measuring accuracy of thermal sensors of type DS18B20 depending on an electrical operating mode at low-intensity ionizing radiation are presented.
Keywords: temperature sensor DS18B20, low-intensity ionizing radiation, measuring accuracy, gamma radiation, electrical operating mode.
66-75
To the question on the material choice for massive constructional elements of space vehicles

M.V. Anokhin, V.I. Galkin, M.B. Dobriyan, A.E. Dubov, N.V. Kiyko, V.L. Sanzhak

It is experimentally shown that the secondary X-ray radiation in constructional materials used on space vehicles under proton influence is the serious damage effect for biological structures and electronics. It is shown that output of X-rays from carbon is essentially less than from aluminum. In view of the cross-section of neutron generation in aluminum essentially above, than at carbon, it is possible to assume perceptivity of wider usage of constructional materials on the basis of carbon in space industry.
Keywords: radiation resistance, ionizing radiation field, X-ray photons, specific absorbed energy in microvolume.
76-78
Radiation treatment of silicon p-i-n structures with different thickness of i-layer

P.B. Lagov, A.S. Drenin, E.S. Rogovsky, S.V. Rudnev

Influence of accelerated electrons with energy 5 MeV and the sequential low-temperature thermal annealing on static and dynamic parameters of silicon p-i-n structures with different thickness of i-layer, used for manufacture of switching diodes of microwave range, is researched.
Keywords: radiation treatment, diode p-i-n structures, influence of accelerated electrons.
79-83
Research of temperature dependence of microstrain speed of radiant-heat modified and nonirradiated polytetrafluoroethylene

V.G. Cheremisov, Zh.V. Muhina, A.S. Gadlevskaya, S.A. Hatipov, P.N. Yakushev, V.V. Shpeizman, A.S. Smolyansky

By the method of laser Doppler deformometry in a range of temperatures 20-200 º comparatively is researched the dependence of microstrain speed of nonirradiated and radiant-heat modified polytetrafluoro-ethylene (PTFE). It is established that radiation modification of PTFE at high temperature leads to lowering of microstrain speed of radiant-heat modified PTFE in comparison with initial polymer. It is assumed that the nature of detected effect can be connected to stopping of molecular motion in radiant-heat modified PTFE owing to cross-linking of polymer chains at radiation treatment.
Keywords: polytetrafluoroethylene, radiation modification, temperature, deformation, molecular motion, Doppler effect, interferometry.
84-89
Results of researches of metrological characteristics of the new dosimetric materials on the basis of the aromatic amines and tetrabromomethane

S.A. Gornostai-Polsky, A.V. Grunin, G.A. Ivanov, K.N. Kovshov, V.V. Kolesnikov, O.V. Kolninov, O.V. Korochkina, O.S. Krotova, S.A. Lazarev, A.M. Molitvin, O.Yu. Ryabov, D.V. Tkachuk, Yu.Ya. Shavarin

Researches of metrological characteristics of the new dosimetric films for absorbed dose measurement in range 50 Gr - 3 kGr are resulted. Experimental batches of dosimetric films have enough high sensitivity and stability of time indications that makes possible to use this materials as part of dosimeters for measurement of absorbed doses in indicated range.
Keywords: dosimetric material, optical density, absorbed dose.
90-93
Use of detectors with dielectric diffuser for graduation of integrating dosimeters in bremsstrahlung field of pulse accelerators

S.A. Gornostai-Polsky, A.V. Grunin, O.V. Korochkina, O.S. Krotova, S.A. Lazarev, A.M. Molitvin, D.V. Tkachuk

The measuring system for graduation of integrating dosimeters at bremsstrahlung of simulator LIU-30 consisting of graduated compensating filters, dosimeters and detectors with dielectric diffuser is researched. Pulses of radiation response of detector system was picked up by means of oscillograph TDS 3054B. As graduated integrating dosimeters are used test samples of color dosimetric films. The absorbed in films dose was calculated by rated-experimental method on the basis of calculated energetic dependences of sensitivity and indications of detector system.
Keywords: bremsstrahlung, absorbed dose, detector with dielectric diffuser, graduation of dosimeters.
94-97
About measurements of electron wide-beam current distribution of accelerator IGUR-3

A.P. Stepovik, T.V. Kupyrina, V.V. Otstavnov, N.Yu. Kasyanov

The method of measurements of relative distribution of current density (/2) of wide-beam electrons of accelerator IGUR-3 is tried out. Beam diameter made ~170 mm, duration 30-50 nanoseconds. Measurements led on heating of calorimeters. Signals from thermocouples registered by analog-to-digital converters.
Keywords: electron accelerator, calorimeter, thermocouple.
98-104
Thermomechanical stress in carbon-carbon composite at electron beam heating

A.P. Stepovik, V.V. Otstavnov, T.V. Kupyrina, N.Yu. Kasyanov

Researches of composite 4 samples reaction to its pulse heating by electron beam of accelerator IGUR-3 are resulted. Propagation velocity of small mechanical perturbations (sound longitudinal velocity) are measured. Dependences of attenuation factors of thermomechanical stress impulses on covered distance of composite sample are received.
Keywords: electron accelerator, carbon-carbon composite, thermomechanical stress.
105-106
Generation of electron beams of small area with high energy density on accelerator HceiFLASH 800-10

I.V. Lavrinovich, S.V. Shlyahtun, A.A. Erfort

Experiments on generation of electron beams in diameter 2-4 mm on accelerator HceiFLASH 800-10 are described. The maximum accelerating voltage on diode gap made to 500 kV, the half-amplitude duration of power pulse – to 10 nanoseconds. Energy density of target electron beam reached 200 J/sm2.
Keywords: electron beam accelerator, accelerating voltage, energy density.
107-110
The pulse electron beam accelerator

A.A. Kachalkov, A.V. Lavrinovich, V.K. Petin, N.A. Ratahin, S.V. Shlyahtun, K.Yu. Vasilev, S.V. Kolesnikov, M.E. Serebryanikov

The pulse electron beam accelerator with output of vacuum-tube accelerated electrons is presented. Electron energy in beam 1 MeV, electrons with energy less than 1 MeV is ≤ 20 %, average adjustable electron flux density is 10-200 /sm2, the irradiated area – unit of square centimeters, pulse duration of accelerating voltage is regulated in range 50-200 nanoseconds.
Keywords: radiation simulator, pulse electron beam accelerator, pulse duration of accelerating voltage.