English






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1, 2013 .

5-9
Harmonization of resistance test procedure of electronic component base to space ionizing radiation in Roskosmos with requirements of foreign standards. Development of test means of Roskosmos

Anashin V.S.

The main anomalies in electronics operating of spacecraft at influence of space ionizing radiation are described. The generalized foreign approach to resistance problem and also harmonized with requirements of foreign standards monitoring procedure of electronic component base resistance accepted by Roskosmos are given. Normative and methodical support recommended for use (including the standard testing techniques) and the test equipment (including its characteristics) are provided
Keywords: ionizing radiation, space, electronic component base, harmonization, test methods, testing means, single effects, dose effects.
10-13
Criterion of experimental data sufficiency at estimation of levels of threshold failures of electronics at influence of pulse ionizing radiation

Figurov V.S.

The criterion of experimental data sufficiency at estimation of levels of threshold failures of electronics at their resistance tests to influence of pulse ionizing radiation is proved. Introduction of this criterion in test practice is necessary for support of unity and reliability of test results, allows to optimize the volume of expensive tests, and also to evaluate an error of determination of levels of threshold failures in case of tests on simulating installations.
Keywords: sufficiency criterion of experimental data, pulse ionizing radiation, levels of threshold failures.
14-17
Use of test bench of resistance monitoring of electronic component base for bipolar operational amplifier tests

Petrov A.S., Petrov M.S., Tapero K.I., Ulimov V.N., Meshchurov O.V., Romanenko A.A., Anashin V.S., Chubunov P.A.

On the example of operational amplifiers LM101AH and LM124J are approved techniques of dose tests of bipolar devices taking into account effects of low intensity by means of the test bench of resistance monitoring of electronic component base at combination of radiation and temperature influences.
Keywords: radiation resistance, bipolar operational amplifiers, absorbed dose, hypersensibility to low-intensive radiation.
18-23
Influence of material composition of protection on predicted radiation dose in critical elements of spacecrafts

Zinchenko V.F., Uzhegov V.M.

Questions of accounting of material composition of instruments and constructional elements of spacecrafts at engineering calculations of local doses in critical elements of onboard equipment are considered. It is shown that aluminum use as a basic constructional material is admissible practically for all space radiation conditions.
Keywords: spacecraft, space, electronics, orbit, researches.
24-28
The experimental researches of energy straggling and linear energy transfer of heavy charged particles after moderator passing

Zinchenko V.F., Lavrentev K.V., Lipsky A.K.

Results of experimental researches of the main regularities of energy straggling of heavy charged particles after passing moderator from steel with different thickness are presented, carried out on the synchrotron of accelerating complex TVN ITEP, Moscow. Measured by silicon surface-barrier detector the spectrums of absorbed energy and the linear energy transfer of iron ions after moderator are well coordinated with results received by the offered calculated technique.
Keywords: researches, linear energy transfer, sensitive volume, heavy charged particles, accelerating complex.
29-31
The valuation method of geometry of IC sensitive areas by latch-up resistance tests at influence of heavy charged particles

Mitin E.V., Sivacheva K.G., Astretsov A.A., Tkachuk K.S.

The algorithm of estimation of geometry of IC areas, sensitive to latch-up at influence of heavy charged particles is offered.
Keywords: integrated circuits, method, sensitive area, latch-up.
32-36
Influence of ionizing radiation on frequency phase-locked loop synthesizers

Kalinin E.V., Mitin E.V.

Phase-locked loop frequency synthesizers of different vendors are considered and their operation at influence of ionizing radiation is analyzed. Units the most sensitive to influence of special factors are shown, and also their probable failures are simulated. On the basis of analysis results are formulated recommendations about a choice of optimum parameters and operation modes of phase-locked loop frequency synthesizers.
Keywords: frequency synthesizers, phase-locked loop, ionizing radiation, experimental research.
37-39
Research of dose degradation of MOS transistors in integrated microcircuit 5503XM5 at influence of heavy charged particles

Malinin V.G., Meleshkevich D.E., Mitin E.V.

Researches of dose degradation of characteristics of CMOS master slice structures 5503XM5 at influence of high-energy protons, ions 40Ar and 84Kr are conducted.
Keywords: MOS transistors, experiment, heavy charged particles.
40-43
Radiation researches of VLSI RAM different types

Bogatyrev Yu.V., Korshunov F.P., Lastovsky S.B., Turtsevich A.S., Shvedov S.V., Belous A.I., Lozitsky E.G., Kulgachev V.I.

Results of experimental researches of radiation resistance of two VLSI RAM types (CMOS chip 1635RU2U and chips of ferroelectric non-volatile RAM FM28V100) at influence of gamma radiation 60 are presented.
Keywords: chip, random access memory, gamma radiation, radiation resistance.
44-49
Increase of radiation resistance of operational amplifier LM124 by circuit methods

Lebedev A.A., Bakerenkov A.S., Didenko V.I., Gorbunov M.S.

Results of simulation of radiation and sensitive characteristics of operational amplifier of the class LM124 are presented. Circuit methods of resistance increase to dose effects and single events from space heavy charged particles are offered.
Keywords: LM124, bipolar transistor, dose, heavy charged particles, space, IC, PSPICE simulation.
50-54
Effects of pulse radiation of digital electronic systems

Ustyuzhaninov V.N.

Regularities of creation of electrical responses in form of current and voltage pulses in LSI power rails and hardware on their basis are considered at ionizing radiation pulse are considered.
Keywords: ionizing radiation pulse, electrical response, current pulse in supply circuit, radiation current-voltage characteristic, LSI, VLSI, dose rate.
55-60
Ionization effects of LSI pulse radiation

Ustyuzhaninov V.N.

Regularities of creation of amplitude-time characteristics of integral pulse of ionization current in LSI power rail operating in static mode are considered.
Keywords: ionizing radiation pulse, LSI, ionization current pulse.
61-66
Influence of neutron radiation on current-voltage characteristics of asymmetrical p-i-n-structures

Legotin S.A., Zaytsev S.N.

Current-voltage characteristics of model asymmetrical silicon p-i-n-structures at neutron radiation are researched. It is shown that the experimental results can be analyzed within diffusion theories of double injection if to take into account the radiation generation not only of recombination centers, but also of electron and hole trapping.
Keywords: p-i-n-structures, double injection, recombination trap centers, fast neutrons radiation.
67-69
Use of test ring oscillators for prediction of failure dose of CMOS IC at influence of low-intensive radiation

Chzho Co Vin

The experimental results of radiation tests of ring oscillators are presented, and are made forecasts of failure doses of CMOS IC at influence of low-intensive ionizing radiation.
Keywords: CMOS IC, test ring oscillators, failure dose, low-intensive ionizing radiation.
70-78
Influence of gamma radiation on capacitive parameters of SOS MIS-structures

Enisherlova K.L., Goryachev V.G., Kapilin S.

Influence of gamma radiation and the following heat treatment on capacitive parameters and on conduction of submicron silicon layers of SOS-structures is tested. The special test structures created on analyzable SOS are researched. Non-monotone type of change of resistance value from radiation dose with minimum of ρ at dose of D = 5-6·104 R is set. After radiation was watched also the shift of frequency and capacitive dependences towards low frequencies. The following isochronous annealing led to restoration of frequency dependences which were before radiation, and to the considerable shift of curves towards high frequencies. The analysis showed that the voltage sign superimposed on gate of MIS-tested structures at radiation, differently influences the tests created on standard SOS and SOS with percrystallized layer. Radiation led also to sharp increase of resistance value for tests of all SOS-structures, thus curve of resistance dependences Rs in accumulation from frequency partially repeated forms of capacitive frequency dependences s   for these structures before rand after radiation. It is shown that at radiation with use of the specified doses changes only the border area silicon-sapphire that leads to sharp change of frequency and capacitive dependences.
Keywords: SOS-structures, submicron epitaxial layers, gamma radiation, C-V-characteristic, MIS-structure, sequential equivalent circuit, acceptors, donors, subthreshold mechanism.
79-84
Mathematical simulation of micro channels forming in the core of high-temperature fuel element on the basis of uranium dioxide

Gontar A.S., Sotnikov V.N.

Calculation techniques of form change of cylindrical micro channel in the core of high-temperature fuel element of thermionic conversion reactor, considering influence of uranium dioxide mass transfer in channel volume, influence of surface diffusion and surface tension are presented. It is shown that for typical operating conditions of electro generating channel by radiuses at least 5 microns the main contribution to its form change has a mass transfer in channel volume. Thus at cladding temperature not over 1500 °C such micro channel isn\´t overlapped by fuel condensate in the course of 10 years, and its profile goes with time to the stationary. At small radiuses (1 micron and less) the prime factor of micro channel forming is surface diffusion. At the base form deviation of channel surface from the cylindrical the micro channel can transform in a chain of spherical pores.
Keywords: uranium dioxide, micro channel, mass transfer in channel volume, surface diffusion, surface tension, micro channel form, temperature, radius.
85-86
Researches of diamond spectrometer in accelerated heavy ion beam of B5 channel of cyclotron U-400M

Altukhov A.A., Anashin V.S., Yemelyanov V.V., Kozyukov A.E., Kolyubin V.A., Lvov S.A., Nedosekin P.G., Sitnikov M.G.

The operation of prototype of heavy charged particles sensor with diamond sensitive element in spectrometer mode in ion beam accelerated to energies up to 500 MeV is experimental researched. It is set that in the range of parameters of the Roskosmos test bench on the basis of U-400M cyclotron the heavy charged particles sensor with diamond sensitive element works in spectrometer mode.
Keywords: diamond spectrometer, heavy charged particles.
87-89
Research of X-ray device MIRA-2D for certification

Terentyev N.I., Gerasimov M.E., Kazakov V.V.

The use possibility of device for experimental estimation of time resolution and pulse response of semiconductor dosimetric detectors SKD1, DAD1, DPPD1 and DPPD2 at approval tests is researched. Controlled parameters: doses on 5 and 50 cm from tube, and also pulse recurrence frequency are corresponded to the values specified in operational documentation. As the device was upgraded (to frequency mode it is added the shot mode), the pulse parameters in frequency mode and shot mode are compared. Parameters are matched. The estimation of pulse half-amplitude duration of device makes 0,55±0,03 nanoseconds. The measured pulse duration of diamond detector DAD1 02 with calculation time resolution of 0,16 nanoseconds makes 0,77 nanoseconds.
Keywords: X-ray device, certification, radiation detectors, time resolution, pulse response.
90-92
Research of radiation characteristics of accelerator LIU-10 in electron mode

Terentyev N.I., Gerasimov M.E., Poteryaeva E.N., Derevyanko Yu.B.

Results of researches in measurement series of 2012 are presented. Dose distribution on accelerator axis at distances of 0,1-1,9 m, and also in cross sections on X at distances of 0,5, 1 and 1,8 m, and on Y at distance of 1,8 m from output window is measured. Pulse shape of absorbed dose rate and electron flux density at distances of 1,4 and 1,8 m is measured. Average electron energy depending on distance to output window and absorption angle of emergence is estimated.
Keywords: accelerator of electrons, dose of electrons, dose distribution, energy of electrons.
93-94
Determination of linearity of diamond dosimetric detectors at accelerator ARSA

Terentyev N.I.

The linearity of low-sensitive semiconductor dosimetric detectors DAD1 at approval tests is researched. Researches were carried out on accelerator ARSA in electron mode at detector and monitor moving simultaneously along beam axis. As the monitor of relative density of electron flux was used graphite Faraday cup with dimensions Ø10x10 mm. It is received that amplitudes of signals with which detectors are still linear make about 130 V on loading of 75 Ohm.
Keywords: current linearity, certification tests, diamond detectors, electron accelerator, Faraday cup.