English






.

2, 2014 .

5-9
Methods of radiation circuit simulation of VLSI CMOS

K.V. Zolnikov, V.A. Sklyar, V.I. Anziferova, S.A. Evdokimova

Questions of circuitry simulation are considered. As basic means is used the developed packet which was modified taking into account features of CMOS LSI, also the models of active elements at radiation influence was modified. For increase of calculating speed is selected the modified Broyden\´s method considering features of conductivity matrixes and basic elements of CMOS LSI.
Keywords: circuit simulation, CMOS LSI, algorithm.
10-13
Method and algorithm of defect search for radiation-resistant chips

K.V. Zolnikov, V.A. Sklyar, V.P. Kryukov, A.V. Achkasov, V.I. Anziferova, S.A. Evdokimova

The method of defect search in LSI functional elements is considered. The algorithm of defect search is described. The functional approach is used for test set which can be interpreted as activation a way from any information source (input or internal register) to the information receiver (output or internal register) and as check of this way.
Keywords: algorithm, LSI, method of defect search.
14-16
Calculation method of ionization current for account of radiation in CAD of VLSI end-to-end design

K.V. Zolnikov, V.A. Sklyar

Questions of simulation of ionization current at pulse radiation action are investigated. The ionization current is received for the modern topological norms therefore edge effects are considered. Expression is received taking into account environment temperature.
Keywords: VLSI, ionization current, CAD system, ionizing radiation, temperature.
17-20
Problems of simulation of space radiation influence on element base

K.V. Zolnikov, V.A. Sklyar, S.A. Evdokimova

Problems of simulation of space influence in CAD Cadence Design System are considered. It is shown that simulation of radiation effects can be realized at the function, circuitry and physical design level. Models of elements which extend at radiation component are for this purpose used.
Keywords: element base, LSI design, space.
21-23
Influence of applied voltage on leakage currents of vacuum switching devices at pulse gamma radiation

A.S. Petrov

Results of influence of applied voltage on different types of vacuum switching devices at ionizing radiation are presented. Current-voltage characteristics of vacuum switching devices depending on dose rate are researched.
Keywords: vacuum switching devices, leakage currents, gamma radiation.
24-26
Research of high-voltage vacuum capacitors at influence of pulse gamma radiation

A.S. Petrov

The research of change of insulation resistance of powerful high-voltage vacuum capacitors of variable capacity at influence of pulse gamma radiation is resulted. By calculation and experimental method the levels of nonfailure operation of capacitors are determined.
Keywords: vacuum capacitors, insulation resistance, pulse gamma radiation.
27-32
Monitoring equipment for dose and single effects

V.S. Anashin, V.V. Emelyanov, A.P. Polinkin, A.G. Baz, P.V. Binyukov

Influence of the ionizing radiation of a space on radio-electronic equipment of spacecrafts is considered. The analysis of electronic and component basis for debugging and manufacture of equipment of monitoring of dose and single effects is carried out, equipment tests are considered. The algorithm and the principle of operation of the sensor of an integral stored dose, signaling device of heavy charged particles and the exchange protocol is described by data of components of equipment.
Keywords: radiation influence, monitoring of radiation effects, spacecraft «Spectr-UF».
33-37
To a question of effect of low dose rate of ionizing radiation in planar bipolar transistors

G.P. Rudnev, K.V. Litvizky, N.G. Gamzatov

The effect of low dose rate in planar bipolar transistors is described from a position of developers of space equipment and possibility of use of resistance indexes received at high dose rate, by work on support of radiation resistance of equipment.
Keywords: gamma radiation, bipolar transistor, low dose rate.
38-41
About correction need of documents regulating dose tests of MOS devices taking into account low dose rate effect

G.P. Rudnev, K.V. Litvizky, N.G. Gamzatov

Resistance indexes on dose effects of MOS devices depending on ionizing radiation dose rate for different groups of instruments are analyzed. It is shown that the documents regulating resistance estimation on dose effects of MOS devices at ionizing radiation influence, don’t have an adequate reflection of real developments of failures and that these documents need correction.
Keywords: MOS devices, normative documents, low dose rate.
42-44
Nonadditivity of LED degradation on the basis of AlGaAs heterostructures at combined radiation by fast neutrons and electrons

P.V. Rubanov, A.V. Gradoboev

It is set that at radiation separately by fast neutrons and electrons the lowering of LED emissive power on the basis of AlGaAs heterostructures happens in two stages. At the first stage there is an emissive power lowering owing to reorganization of defective structure, and at the second stage – owing to introduction of purely radiation defects. At combined radiation the nonadditivity of degradation of LED emissive power is shown. Preliminary radiation by fast neutrons leads to lowering of contribution of the first stage in the general process of degradation at subsequent electron radiation, and preliminary radiation by electrons leads to emissive power restoration on the first step of degradation at subsequent neutron radiation.
Keywords: LED, AlGaAs heterostructure, degradation, neutrons, electrons, radiation resistance, radiation.
45-47
Estimation of exponential radiation transfer characteristic on product response to influence of ionizing radiation of pulse simulating installations

V.S. Figurov

Methods of determination of exponential radiation transfer characteristic of electronics products on response of these products to radiation pulse of simulating installations of the type RIUS-5 are considered. Methods are applicable to the products which response to influence of radiation pulse falls down after the end of this pulse under the exponential law.
Keywords: product response to radiation pulse, exponential radiation transfer characteristic.
48-59
Researches of characteristics of radiation pulses of installation «Elektronika U-003» in single pulses mode and try-out of test technique of electronics products on this installation

V.S. Figurov, V.V. Baykov, V.V. Shelkovnikov, A.A. Kondratenko, V.G. Cherepuhin

The main characteristics of electronic radiation of installation «Elektronika U-003» in generating mode of a given number series of single pulses are researched. It’s shown the possibility of resistance tests of electronics products to influence of pulse ionizing radiation with set value of pulse dose at joint use of installation «Elektronika U-003» and pulse simulating installations RIUS-5 type. The tests on researched installation in generating mode of given number pulses with period ~4 microsecond are probed.
Keywords: installation «Elektronika U-003», single pulses series, resistance tests with set value of pulse dose.
60-67
Resistance tests procedure of electronics products to pulse ionizing radiation with set value of pulse dose with use of installations «Elektronika U-003» and RIUS-5

V.S. Figurov, V.V. Baykov

The resistance test procedure of electronics products to influence of pulse ionizing radiation with set value of pulse dose at joint use of installation «Elektronika U-003» in generating mode of given number of pulses and pulse simulating installations RIUS-5 type is offered.
Keywords: joint use of installations RIUS-5 and «Elektronika U-003», tests with set value of pulse dose, effective relaxation time, threshold failures, service outage time, test reliability.
68-72
Try-out of monitor of radiation output of installation RIUS-5 and its application

V.S. Figurov, V.V. Baykov, V.V. Shelkovnikov, N.S. Bolnyh, A.V. Stulov

The monitor of radiation output of installation RIUS-5 with four diodes SF38 beforehand irradiated on installation 40 with neutron fluence 0,1 = 1,2·1015 cm-2 is developed. Construction of monitor provides minimization of dependence of its output signal on instability of angular radiation distribution and on radiation field loading by tested samples. The monitor allows to define distribution of installation radiation field and its reproducibility, quickly to receive a preliminary estimate of radiation levels in the given field point, to control spectral radiation content, dosimetric errors and etc.
Keywords: simulating installation RIUS-5, monitor of radiation output, monitor application at dosimetry.
73-81
The experimental estimation of variation of radiation efficiency of installation RIUS-5 within its test box

V.S. Figurov, V.V. Baykov, V.V. Shelkovnikov, N.S. Bolnyh, A.V. Stulov

The change of photon radiation efficiency in box of pulse simulating installation RIUS-5 for silicon products at distancing a radiation point from installation target is experimental estimated. Changes of radiation efficiency at distancing from a target to point Z = 106 cm don\´t exceed 10 % and is within random errors of measurements. The directions of further researches are defined.
Keywords: installation RIUS-5, variation of photon radiation efficiency.
82-88
Influence of pre-irradiation on change of transmittance spectrum of substrate under molecular flows

R.H. Hasanshin, V.I. Kostyk, L.S. Novikov, I.B. Vintaykin, A.P. Shakhorin

The influence of preliminary electron radiation of K-208 glass substrates to the following deposition of products of thermally stimulated gas emission of polymer composite is experimentally researched. The electron flux density was in the range 1·1010-2·1011 sm-2·s-1 at energy of particles 20 keV. It is shown that radiation leads to modification of substrate surface caused by its near-surface defect annealing and electrostatic discharges. It is established that on electron flux density depends the type of electrostatic discharge in many respects defining nature of modification of substrate surface, stimulating growth of contaminant films under molecular flows.
Keywords: spacecraft, protective glasses of solar batteries, electron radiation, electrostatic discharges, transmittance spectrum.