English






.

4, 2014 .

5-9
Acoustic and radiographic methods of technological preparation of IC samples for resistance tests to space ionizing radiation

Anashin V.S., Surnin V.N., Babak R.P., Holodova A.S.

Results of use of acoustic and radiographic methods of non-destructive inspection by preparation of integrated microcircuits for tests in branch of JSC «URSC» - «ISDE» are considered.
Keywords: non-destructive inspection, acoustic method, radiographic method.
10-11
Automation of measuring procedure of exposure dose rate

Terentev N.I., Kazakov V.V., Ozerov A.I.

The Pulsemeter program providing communication of operator computer of measuring procedure of exposure dose rate with oscillographs (TDS3054, DPO7104, DSO5054) in accelerators RIUS-5, LIU-10 using local area network is developed. The program processes signals: makes zero shifts and smoothing and files in .csv format, and also displays them. The program calculates pulse parameters: amplitude, half amplitude duration and square at set time. The next calculation allows to receive the maximum value of exposure dose rate, dose for set time and effective pulse duration. These results can be available to all network users.
Keywords: Pulsemeter program, computer, dose rate measurement, oscillograph, local area network.
12-15
Level detection of X-ray radiation on in unit installed devices at X-ray inspection of pipeline circular welds

Terentev N.I., Kazakov V.V., Poteryaeva E.N., Zinchenko V.F., Chiyakin A.N.

The expected absorbed dose rate in unit electronics by X-ray inspection is measured. At standard inspection the summary absorbed doses can reach several hundred rad (Si) that isn’t allowably for electronics by the following operation in an orbit within 15 years. Protection methods in the form of steel tubes for X-ray devices and leads up to 2 mm thick enclosed for welds are offered. In this case summary doses aren\´t more than 3 rad. Dose fields of X-ray devices RUP-120 and RAP 160 are measured, and also radiation spectral content are calculated.
Keywords: absorbed dose, electronics, measurements of dose rate, X-ray devices, X-ray shielding.
16-19
Creation and verification of SPICE model of MOS device by pulse gamma radiation

Averyaskin A.S., Hananova A.V.

The method and results of simulation of pulse gamma irradiation influence on MOS device by connection of generators of ionization currents are presented. The received results are compared with experimental data.
Keywords: SPICE model, radiation effects, MOS device, gamma radiation.
20-23
Radiation tests of prototype product «System in package» of unified information coding module to low-intensity gamma radiation influence

Azyabin S.V., Bumagin A.V., Gorin B.M., Makshanov O V., Murzin V.Yu., Oluhov V.M., Pashinsky I.O., Petrov A.S., Seleznev S.B., Skripnikov A.A.

Prototype product «System in package» of unified information coding module is developed, made and tested for resistance to low-intensive gamma radiation influence of installation «Gamma-N» to absorbed dose 2,16·104 rad(Si). After radiation and next annealing within 168 hours at temperature of 1000  samples saved their working capacity.
Keywords: VLSI, system in package, unified information coding module, radiation tests.
24-32
Theoretical basis of simulation of designed objects of electronic component base for virtual reality synthesis in the form of heavy charged particles influence

Lavlinsky V.V.

The theoretical basis of 3D simulation of CAD components and development on this basis of electronic component base with description of 3D simulation of radiation resistant CAD components are considered. On the basis of virtual reality synthesis of VRML language the approach for description of heavy charged particles impact on CMOS structures is offered. The technology of development of CAD components for electronic component base radiation resistant to external influences is described. Mathematical models and examples of creation of separate components for CAD elements are given.
Keywords: electronic component base, 3D simulation, CAD, heavy charged particles, CMOS structure.
33-35
Theoretical researches of simulation of designed objects of electronic component base for virtual reality synthesis at heavy charged particles influence

Lavlinsky V.V.

The theoretical researches of 3D simulation of CAD components at virtual reality synthesis of CAD components resistant to radiation influence are considered.
Keywords: electronic component base, 3D simulation, CAD, heavy charged particles, radiation resistance.
36-40
Change of optical characteristics of emitting GaN and GaAs structures at influence of heavy doses of gamma radiation

Basargina N.V., Vorozhtsov I.V., Dubrovsky S.M., Tkachev O.V., Kupyrina T.V., Shukailo V.P.

Results of research of gamma radiation influence of isotopic source Co60 on optical characteristics of laser diodes and LEDs on the GaN and GaAs basis are presented. It is shown that sensitivity of GaN instruments to gamma radiation is one order less than similar GaAs instruments.
Keywords: gamma radiation, laser diodes, LEDs, radiation resistance.
41-48
Comparative resistance tests to influence of heavy charged particles of majority elements made on volume 65 nanometers CMOS technology

Danilov I.A., Rogatkin Yu.B.

Results of comparative resistance tests to influence of heavy charged particles of five majority elements made on volume CMOS technology with project norms of 65 nanometers are presented. The selection term of majority element for specific strategy of triple modular redundancy on the basis of its resistance and the functional parameters is offered.
Keywords: majority elements, triple modular redundancy, heavy charged particles, single failures, failure tolerance, combinational circuitry, CMOS IC.
49-52
Estimation of radiation resistance of different types of CMOS integrated microcircuits

Bogatyrev Yu.V., Korshunov F.P., Lastovsky S.B., Soroka S.A., Shvedov S.V.

Results of calculated-experimental estimation of radiation resistance of CMOS integrated microcircuits IN74AC04 and CMOPS/SOI VLSI of static random access memory with capacity of 256 Kb are presented.
Keywords: radiation resistance, CMOS integrated microcircuits, gamma radiation.
53-56
Screens of local radiation protection of products of microelectronics

Bogatyrev Yu.V., Vasilenkov N.A., Grabchikov S.S., Lastovsky S.B., Yakushevich A.S., Pankratov P.V.

Results of researches of protective properties of metal-and-ceramic cases of integrated microcircuits and perspective materials of local protection at electron radiation are presented.
Keywords: integrated microcircuits, metal-and-ceramic case, materials of local protection, electron radiation.
57-60
Approbation of research method of combined action of external electromagnetic radiation and bremsstrahlung on electronics

Stepovik A.P., Otstavnov V.V., Protas R.V., Hafizov R.R.

On universal bremsstrahlung installation with two accelerating tubes a research method of combined action of external electromagnetic radiation generated by electron beam, and bremsstrahlung is probed. External electromagnetic radiation acted on cable section connecting the recorder to the output of pulse-series generator done on integrated microcircuit of extensive use K555LA3.
Keywords: closed shielding, external electromagnetic radiation, accelerating tube, method, bremsstrahlung.
61-66
About generation of external electromagnetic radiation in large-size volume by pulse electron beam

Stepovik A.P., Otstavnov V.V., Protas R.V., Hafizov R.R.

For the purpose of simulation of combined action of external electromagnetic radiation and ionizing radiation on objects of electronics on universal installation with two accelerating tubes a method of external electromagnetic radiation generation by electron beam in big shielding volume is tried out. Distributions of external electromagnetic radiation components along a beam direction are received.
Keywords: external electromagnetic radiation, electron beam, closed shielding, bremsstrahlung, accelerating tube.
67-74
Benches of heat tests in JSC «D.V. Efremov institute of electrophysical apparatus»

Volodin A.V., Kuznetsov V.E., Davydov V.M., Kokoulin A.I., Komarov A.O., Mazul I.V., Mudyugin B.G., Ovchinnikov I.B., Stepanov N.B., Rulyov R.V., Eryomkin A.V., Rogov A.I., Pryanikov V.V.

The review of benches of heat tests exploited in JSC «Institute of Electrophysical Apparatus» is presented. The benches are intended for heat tests of different prototypes with different facing materials, and also for tests of intrachamber plasma facing ITER components.
Keywords: electron beam, heat tests, divertor, first wall.