




Ñòð.  N. 1, 2015
 58

Features of mathematical treatment of results of single events resistance tests
Mitin E.V., Nekrasova E.N., Sivacheva K.G.
Features of mathematical treatment of results of single events resistance test are considered. Approximation of the experimental data by 4th parameter Weibull function was done in several software programs which are usually used for the analysis of test results. It was revealed that for most of the considered products the program choice for experimental data treatment, and also an approximation method (the standard or weighed leastsquares method), don´t influence the failure rate, but has a significant impact on threshold value of the linear energy transfer.
Keywords: Weibull function, single events, linear energy transfer.
 913

Development and verification of evaluation method of geometrical parameters of IC regions sensitive to failure single effects
Mitin E.V., Sivacheva K.G., Nekrasova E.N.
Research which continued a cycle of works on determination of geometrical parameters of sensitive regions of integrated circuits (IC) at resistance tests to failure single effects is given. Study of algorithms of calculation of single effects frequency put in the common software for resistance indexes calculation, and also observation over nature of IC behavior at laser radiation influence showed the need of transition from intracell model to intercell model. The offered method allows to evaluate geometrical parameters of sensitive regions, and also their quantity, based only on experimental data results.
Keywords: latchup, sensitive regions, failure rate, resistance indexes.
 1419

Methodology of characterization of multiple failures section in digital circuits of largescale integration memory
Zebrev G.I., Zemtsov K.S., Ozerov A.I., Yemelyanov V.V., Useynov R.G., Gorbunov M.S., Anashin V.S., Kozyukov A.S.
The problem of characterization of multiple failures from single particles in digital circuits of largescale integration memory with technological norm less than 100 nanometers is considered with use of new function interpolating the experimental dependences of failure midsection in unsaturated conditions. Communication of such section behavior from the linear mission energy transfer (LET) with nonlocality of separate ion influence, fluctuation of energy release, reduction of charge output at large LPE is discussed.
Keywords: single effects, multiple failures, failure section, LET, simulation.
 2023

Simulation of nonmonotone behavior of dose degradation of bipolar instruments within nonlinear system of kinetic equations
Zebrev G.I., Drozdetsky M.G., Galimov A.M., Useinov R.G.
Within numerical nonlinear model the degradation of parameters of bipolar instruments for different radiations of samples is simulated. It is shown that watched at radiation of bipolar instruments nonmonotone degradation can be explained by means of nonlinear system of kinetic equations for charge accumulation in field oxide and surface recombination centers.
Keywords: dose rate, degradation, ELDRS, bipolar technology, annealing, simulation.
 2427

Electromagnetic field inducted by short pulses flux of high energy gamma quantums propagating in air
Chudnovsky A.L.
The electromagnetic radiations inside the aircraft body inducted by residual energy of gamma quantums from pulsed narrowdirected sources of high energy gamma quantums are estimated. It is shown that there can be a threat of functioning of electronics placed inside the aluminum body.
Keywords: electromagnetic radiation, bremsstrahlung gamma quantum source, production and annihilation of electronpositron pairs.
 2833

Numerical simulation of radiation degradation of radioelectronic components
Okuntsov M.I., Yunda N.T.
The linear empirical model for numerical simulation of degradation of electronic component parameters at radiation tests considering parameter spread of testing components and statistical uncertainty of dose levels is offered.
Keywords: empirical model, electronic components, MonteCarlo method, radiation degradation, statistical uncertainty.
 3438

Research of efficiency of paint and thermal control coating use for protection of onboard equipment against space ionizing radiation influence
Zinchenko V.F., Romanenko A.A., Uzhegov V.M., Anashin V.S., Protopopov G.A., Grigorevsky A.V., Hasanshin R.H., Sogoyan A.V.
Results of estimated and experimental researches on optimization of multilayer protective covers for the lowering of local dose loadings in instruments of space onboard equipment are presented. It is shown that use of industrial samples of thermal control coatings under certain conditions allows to lower a space ionizing radiation dose by 23 times in comparison with aluminum protection with the equivalent mass thickness.
Keywords: spacecraft, ionizing radiation, protective cover.
 3943

Single events in powerful MOS transistors at influence of neutrons with energy of 14 MeV
Basargina N.V., Vorozhtsova I.V., Dubrovsky S.M., Kupyrina T.V., Tkachev O.V., Shukailo V.P.
Research results of influence of static radiation by neutrons with energy of 14 MeV on powerful IGBT and MOSFET transistors are presented. It is shown that at radiation in transistor drain circuit there are current pulses. This effect is characterized by accidental appearance of pulses that takes place at draintosource voltage above some threshold; by frequency of pulse appearance which value exponentially increases with increase of voltage; by cross section which for nchannel transistors depends on sample orientation concerning a radiation field; in some cases by catastrophic failure similar on the end result to SEGR.
Keywords: MOS transistors, single events, statistical radiation.
 4450

Modification of glass surface structure at electric discharging under influence of electrons with energy of 40 keV
Hasanshin R.H., Kostyk V.I., Korovin S.B., Volkova Ya.B., Kosogorov A.V., Porzhezhinskaya E.Yu., Svechkin V.P.
Influence of electron radiation of K208 glass on development of electrostatic discharges leading to its surface modification is researched. Changes of surface structure of glass samples were investigated by atomic force microscopy. The samples were radiated by electrons with energy E_{e0} = 40 keV and flux density φ_{e} from 10^{10} to 2,0·10^{11} cm^{2}·s^{1 }in vacuum chamber with p_{ν} = 103 Pas. In experiments were the discharges which are followed by plasma ejection in environment and by formation of bit channels up to 5 nanometers in depth; separate microirregularities up to 200 nanometers high and clusters from them; structures up to 25 mkm^{2}, towering over glass surface on 2 nanometers. It is shown that surface structural changes depend as on radiation conditions – parameter φ_{e} and p_{ν}, and on macroscopic defects on glass.
Keywords: Electrostatic discharge, electronic equipment, glass K20, atomic force microscopy.
 5153

Operational determination of absorbed dose rate in sensitive volume of products of electronics at radiation tests
Zinchenko V.F., Ivashchenko D.M., Mordasov N.G.
On the basis of diagnostic system of accelerator UIN10 and its software the calculatedexperimental method of operational determination of absorbed dose rate and the absorbed dose of bremsstrahlung in sensitive volume of irradiated products is created.
Keywords: UIN10P complex, dose rate, absorbed dose.
 5456

Technical safety control system of testing on complex UIN10P
Mikulin I.N., Mordasov N.G., Ivashchenko D.M.
The possibility of creation of technical safety control system of testing on complex UIN10P according to requirements SanPiN 6.1.25732010 is analyzed. Implementation of this technical system on complex UIN10P providing monitoring of operators actions during startup is shown.
Keywords: complex UIN10P, security arrangement, engineering control.






