English






Page.
No. 4, 2015
5-10
The method for VLSI component diversity for crossing repeated faults under the impact of heavy charged particles

A.P. Skorobogatov

Scientific Research Institute of System Analysis of the Russian Academy of Sciences
Russia, Moscow
e-mail: skorobog_a@cs.niisi.ras.ru

Spatial diversity of VLSI registers for minimizing frequency of repeated faults under the impact of heavy charged particles is validated. The simulation results of fault ratio in the processor modules framed under current experimental development are summarized. The methodology for distributing VLSI sensitive elements under standard composite function of modern computer-aided design tools is introduced.

Keywords: heavy charged particles, fault-tolerance, repeated fault, spatial diversity.
11-19
Transient simulation in the register file reading system due to single event effects

A.O. Balbekov

Scientific Research Institute of System Analysis of the Russian Academy of Sciences
Russia, Moscow
e-mail: balbekov@cs.niisi.ras.ru

The application results of the combinational circuit fault-tolerance evaluating method for the register file reading system fault analysis are presented. Transient phenomena induced by single particles falling into the reading system elements having different operation principles are described and analyzed.

Keywords: fault-tolerance, single event effect of the transient ionization reaction, column buffers, register file, sense amplifier, DICE.
20-27
The analysis of the performance improving possibilities of fault-tolerant microprocessor using dedicated cells and codes with error correction in cash-memory

A.O. Balbekov1, M.S. Gorbunov1,2, I.A. Danilov1, P.S. Dolotov1, A.A. Kiselyova1, S.I. Olchev1, K.A. Petrov1, A.P. Skorobogatov1, A.I. Shnaider1

1Scientific Research Institute of System Analysis of the Russian Academy of Sciences
Russia, Moscow
e-mail: balbekov@cs.niisi.ras.ru
2National Research Nuclear University “MEPhI”
Russia, Moscow

Average cash-memory access time depending on L1 cash-memory size with different L1 and L2 implementation variations – on DICE and 6T cells with and without error correcting codes is analyzed.

Keywords: single event upset, heavy charged particles, multiple-bit upset, critical charge, DICE, SRAM, CMOS, guardbands, total dose effects.
28-37
The estimation of digital electronics element resistance to single event effects in the area of linear energy transfer minor values

M.M. Venediktov, V.K. Kiselyov

Sedakov Research Institute of Measuring Systems
Russia, Nizhny Novgorod
e-mail: m.ven@mail.ru

One of the result handling methods for digital integrated circuit tests for resistance to the impact of heavy charged particles or ions of various space energies, which consists in peculiarities of single event upset cross-section dependence in the area of linear energy transfer (LET) minor values, is presented.

Keywords: upset effects, single event effect (SE), single event upset (SEU), heavy charged particles, equipartition law, three-parameter Weybull distribution, linear energy transfer value, upset criteria.
38-42
A compact model for failure rate estimation in space conditions

G.I. Zebrev, K.S. Zemtsov

National Research Nuclear University “MEPhI”
Russia, Moscow
e-mail: gizebrev@mephi.ru

The ambiguity of the traditional method of the approximate soft error rate (SER) evaluation based on the figure of merit approach is shown, and a new formula for compact SER modeling is proposed. Based on new parameterization of the cross-section vs. LET dependence, a new procedure for the heavy ion-induced SER calculation is proposed.

Keywords: single event effect, soft error rate, failure cross-section, heavy ions, multiple failures, modeling.
43-46
The MOS transistor parameter change under low-intensity radiation

R.V. Vlasov, V.D. Popov

National Research Nuclear University “MEPhI”
Russia, Moscow
e-mail: wdpopov@mail.ru

The experimental data and parameter change dependences of CMOS IC MOS transistors under low-intensity gamma radiation with dose rate of 0.1 and 1.0 rad/s are presented. The implementation of the subthreshold current method for determining the number of radiation induced interface traps is demonstrated. Two-stage interface trap generation process is confirmed.

Keywords: CMOS invertor, MOS transistors with n-channel and p-channel, drain-gate characteristic steepness, surface defects, low-intensity radiation.
47-51
The application of MOS transistors for time efficient radiation control in the ionizing radiation fields

V.I. Butin, A.V. Butina, F.V. Chubrukov

All-Russia Research Institute of Automatics
Russia, Moscow
e-mail: vniia@vniia.ru

The methodology for MOS transistor application as dose budget detectors is introduced. The methodology is found on physically based dose dependence of p-channel MOS transistors on absorbed dose. Based on calibration results via the electro-physical model of dose effects, the numerical values of current-voltage characteristic dose dependence parameters are determined, which serves as the basis for the absorbed dose value calculation based on measurement results of the MOS transistor drain current in after-threshold behavior.

Keywords: time efficient radiation control, MOS transistor, absorbed dose, CMOS IC, calibration.
52-58
Radiation resistance of electronic products irradiated on GU-200 facility in active and passive electric modes

B.N. Semenets, A.A. Safiyanov, A.K. Lipskiy, A.N. Makhinya, M.V. Nazarenko

Research Institute of Scientific Instruments
Russia, Moscow region, Lytkarino
e-mail: risi@niipribor.ru

The MAX280, IRFL4105, CDCLVC1102, MSA2805, MSA2815, ADM2486, TPS62040 and TPS3823 product test results in active and passive electric modes are presented. The radiation resistance of products by dose effect in active and passive modes is distinguished, which should be taken into consideration, when estimating radiation resource of spacecraft onboard equipment with ‘cold’ backup.

Keywords: dose effects, electric mode, backup.
59-60
The application of the RD V 319.03.31 in determining test regulations for multi-element electronic products for resistance to special factors

O.G. Aituganov, A.I. Petrov

JSC «Research and production corporation «Istok» named after Shokin»
Russia, Moscow region, Fryazino
e-mail: info@istokmw.ru

The annex of the RD V 319.03.31 regulations to the tests of the multi-element electronic products for resistance to special factor effect is studied. It is demonstrated that the application of this RD regulations makes it difficult to estimate resistance to special factor effect of such products.

Keywords: electronic products, SHF modules, special factors.
61-64
The methodology of the UIN-10 accelerator bremsstrahlung pulse duration generation

D.M. Ivashchenko, V.A. Kamenskiy, N.G. Mordasov, A.P. Metelyov, A.A. Fyodorov, N.I. Filatov

Research Institute of Scientific Instruments
Russia, Moscow region, Lytkarino
e-mail: risi@niipribor.ru

Modern radiation test methods require generation of the gamma radiation pulses on simulator in duration range of 0.01÷3.0 μs at constant dose rate level. The dependence of current pulse leading edge duration in a tube diode and bremsstrahlung pulse characteristics in the focused beam generating mode on the electro-explosive circuit breaker parameters (number of conductors, their cross-section and length) on UIN-10 is determined. In order to correct the pulse trailing edge a bare “chopping” gap is introduced into the accelerator design, which is installed between the electro-explosive breaker and the peaking gap.

Keywords: UIN-10 accelerator, radiation tests, chopping gap, electro-explosive circuit breaker.
65-68
The repeatability enhancement of the UIN-10 accelerator output characteristics

N.G. Mordasov, D.I. Ivashchenko, V.A. Kamenskiy, A.P. Metelyov, A.A. Fyodorov, N.I. Filatov

Research Institute of Scientific Instruments
Russia, Moscow region, Lytkarino
e-mail: risi@niipribor.ru

UIN-10 accelerator modernization is performed, which allowed enhancing the repeatability of the gamma radiation pulse characteristics by using a cathode cell-type tube in the circuit before diode tube.

Keywords: UIN-10 accelerator, radiation tests, repeatability of characteristics.
69-70
The modernization of the UIN-10 accelerator cathode-anode assembly

T.B. Mavlyudov, D.M. Ivashchenko, N.G. Mordasov

Research Institute of Scientific Instruments
Russia, Moscow region, Lytkarino
e-mail: risi@niipribor.ru

In order to improve the UIN-10 performance a construction design of the cathode-anode assembly is developed, which provides for the gate installation and quick target change without vacuum removal. The construction design also allows measuring target current in permanent beam configuration.

Keywords: UIN-10 accelerator, output device, gate, cathode, diode tube.
71-74
The use of a single-stage surge gap for UIN-10 accelerator pulse generation

D.I. Ivashchenko, V.A. Kamenskiy, N.G. Mordasov, A.P. Metelyov, A.A. Fyodorov, N.I. Filatov

Research Institute of Scientific Instruments
Russia, Moscow region, Lytkarino
e-mail: risi@niipribor.ru

The influence of pressure in surge peaking gap on high-voltage pulse generation in the UIN-10 accelerating tube is studied. It is shown that as the pressure in the peaking gap grows, the high-energy component of electron radiation and bremsstrahlung spectra increment, the leading edge time reduces, and bremsstrahlung pulse duration and form changes.

Keywords: UIN-10 accelerator, bremsstrahlung spectrum, peaking gap.
75-77
A compact transducer for measuring nano and subnanosecond current pulses

V.V. Kochergin, K.V. Lavrentev, D.M. Ivashchenko

Research Institute of Scientific Instruments
Russia, Moscow region, Lytkarino
e-mail: risi@niipribor.ru

A current transducer design with a chip-resistor shunt for measuring nano and subnanosecond current pulses ranged up to 1000 A is introduced. The current transducer is dedicated to measuring single components of structured currents in order to study their distribution through the aircraft design elements.

Keywords: current shunt, structured currents.