English






Page.
No. 1, 2017
5-11
Evaluation Methodology of the Spacecraft Electronic Equipment Radiation Hardness to Single Event Effects

K.G. Sizova1, P.K. Skorobogatov2, Yu.A. Vetrinskiy3

1LLC “NPC “Granat”
Saint Petersburg, Russia
e-mail: ksizova@npcgranat.ru
2National Research Nuclear University “MEPhI”
Moscow, Russia
3Peter the Great St. Petersburg Polytechnic University
Saint Petersburg, Russia

The evaluation of electronic equipment hardness to space environment charged particle influence by single event effects in accordance with standard is carried out. Limitations of the current approach in radiation tolerance evaluation of modern electronic equipment are identified and its new variant of development is proposed. The stage of calculated and experimental evaluation allowing determining the radiation tolerance of functionally complex systems considering their recovery strategy is introduced. The comparative analysis of the spacecraft payload hardness obtained on the basis of the existent and proposed methods is provided.

Keywords: probability, failure, error, ionizing radiation, spacecraft, single event effects, radiation hardness, tolerance, electronic equipment, calculation and experimental evaluation method.
12-14
Working off of the Laser Heating Technique of Chips in Electronic Component Base at Resistance Tests to Single Radiation Effects

E.V. Mitin1, P.Yu. Gromov1, E.N. Nekrasova1, N.A. Ivanov2

1LLC “NPC “Granat”
Saint Petersburg, Russia
e-mail: emitin@npcgranat.ru
2Petersburg Nuclear Physics Institute NRC “Kurchatov Institute”
Saint Petersburg, Russia

The method of contactless heating of chips in electronic component base at radiation tests with use of powerful Infrared lasers is offered. The example of practical realization of a method, results of experiments with various samples of products, and also results of computer modeling of thermal processes in vacuum and on air are given. A method applicability from the point of view of temperature distribution inhomogeneity in the tested sample, heating speed and other factors are discussed.

Keywords: tests, elevated temperature, latch-up, temperature range.
15-17
Research of Features of Latent Defects in Gate Insulator of MOS Devices at Heavy Charged Particles Influence

E.V. Mitin1, P.V. Semenchukov1, N.A. Ivanov2

1LLC “NPC “Granat”
Saint Petersburg, Russia
e-mail: @npcgranat.ru
2Petersburg Nuclear Physics Institute NRC “Kurchatov Institute”
Saint Petersburg, Russia

The survey research of data on latent defects properties in gate insulator of MOS devices is conducted. Classification of latent defects, mechanisms of their origin and influence on irradiated samples properties are discussed. Dependences of MOS devices sensitivity to latent defects origin on a particles incidence angle are for the first time given. Amendments to the test methods on gate insulator breakdown regulated by operating normative documentation are offered.

Keywords: MOS device, latent defect, heavy charged particles, SEGR, breakdown, researches.
18-21
Questions of the Requirements Establishment for Integrated Circuits Hardness at Heavy Ions Influence

A.I. Chumakov1,2, V.M. Uzhegov3, A.O. Akhmetov1,2, D.V. Boychenko1,2, A.V. Yanenko1,2, N.V. Ryasnoy4

1National Research Nuclear University “MEPhl”
Moscow, Russia
e-mail: ahmet@spels.ru
2JSC "ENGOs SPELS"
Moscow, Russia
3TSNIIMash
Korolev, Moscow region, Russia
4JSC Space Rocket Centre Progress
Samara, Russia

Approach to the requirements establishment for integrated circuits hardness at heavy charged particles influence is offered. This method is based on comparing of probabilities of IC failures connected to reliability and the failures at heavy charged particles influence in the most severe operation conditions.

Keywords: heavy charged particles, integrated microcircuit, requirements for hardness to single failures.
22-25
Influence of Electric Mode to the Formation of Surface Defects in MOS Transistor at Low-Intensity Prolonged Exposure to Gamma Radiation

K.A. Petukhov, V.D. Popov

National Research Nuclear University “MEPhl”
Moscow, Russia
e-mail: wdpopov@mail.ru

The results of irradiation experiments CMOS IC at a dose rate of 0.1 rad/s in electrical and passive modes are presented. There were two stages of surface defects formation, in both cases when irradiated with MOS transistors as the n-channel and p-channel.

Keywords: electrical and passive mode, relative change of surface electron and hole mobility, two stages of interface trap formation.
26-30
Parametric Study of Soft Error Rate Calculations in Space Environment

A.M. Galimov, E.V. Mrozovskaya, I.V. Zhilenkov, R.M. Galimova, G.I. Zebrev

National Research Nuclear University “MEPhl”
Moscow, Russia
e-mail: farmat913144@gmail.com

The failure intensity in commercial memory chips in real flight data is compared with the calculation results received by means of new compact model. The parametric study of soft error rate calculation is presented. The benefits of new approach use are shown.

Keywords: single event effects, error rate, cross section, heavy ions, simulation.
31-35
Determination of CMOS IC Hardness Margin at Ionizing Radiation Impact

F.V. Chubrukov

All-Russia Research Institute of Automatics
Moscow, Russia
e-mail: vniia@vniia.ru

The approach to determination of CMOS chips dose margin is presented. This method is based on measurement a drain-gate characteristics of n- and p-channel transistors from chip composition at static gamma radiation impact. The presented approach allows to determine the dose margin by CMOS chips functioning for different supply voltage and to predict the dose level of chip functional failure.

Keywords: hardness prediction, functional failure, CMOS chip.
36-42
The Three-Layer Single Crystal Emitter Cladding

N.A. Bochkov, A.S. Gontar, E.G. Kolesnikov, M.V. Nelidov

FSUE “Research Institute Science and Production Association “Luch”
Podolsk, Moscow region, Russia
e-mail: gontar@istok.sialuch.ru

Comparative calculation and experimental investigations on creep resistance and thermal cyclic behavior of two and three-layer single crystal emitter cladding of W-Nb, Mo-Nb and W alloys are executed. It is shown that using of three-layer cladding permits to ensure a long TFE lifetime and simultaneously to reduce its coast.

Keywords: three-layers emitter cladding, single crystal alloys W-Nb, Mo-Nb and W, creep, thermal cyclic behavior.
43-46
About Need of Correction of RD V 319.03.31-99 Provisions when Calculating Test Norms of Difficult Multielement Electronic Products

O.G. Aituganov, A.I. Petrov

JSC “RPC “Istok” named after Shokin”
Fryazino, Moscow region, Russia
e-mail: info@istokmw.ru

The fallacy of applying of RD V 319.03.31-99 provisions when calculating resistance test norms to special factors influence of difficult multielement electronic products is shown. It is offered to limit when calculating test norms of State standard RV 20.39.414-98, or to correct regulation document so that to make him applicable to calculation of test norms of multielement electronic products.

Keywords: electronic equipment products, test norms, special factors.
47-50
Diagnostics of LIU-10 Accelerator Peripheral Systems Operation

D.M. Ivashchenko, N.G. Mordasov, A.P. Zemlyanskiy, A.I. Abramov

Research Institute of Scientific Instruments
Lytkarino, Moscow region, Russia
e-mail: ngmordasov@niipribor.ru

The hardware implementation and the software of diagnostic system of LIU-10 accelerator peripheral units operation with use of digital recorders of different types are presented.

Keywords: LIU-10 accelerator, flow chart, measuring system, bremsstrahlung.