English






Page.
No. 4, 2017
5-10
Compact Modeling of Soft Error Rates: Prediction of Cosmic Proton-induced Error Rates Based on Heavy Ions Data

A.M. Galimov

1National Research Nuclear University ‟MEPhl”
Moscow, Russia
2JSC ‟Progress Microelectronic Research Institute”
Moscow, Russia
e-mail: galimov@mri-progress.ru

The proton soft error rates calculation technique of commercial memory circuits based on heavy ions data is offered. Soft error rates by means of Monte Carlo simulation of secondary particles LET-spectra in the circuit’s sensitive slab are calculated. The calculation procedure by the direct comparison with on-board data is verified.

Keywords: single event effects, soft error rate, cross-section, protons, secondary particles, Monte-Carlo technique.
11-14
Determination a Level of Free-failure Functioning of Bipolar Integrated Circuits at Pulse Gamma-Neutron Radiation Influence

N.N. Panyushkin

Voronezh State University of Forestry and Technologies named after G.F. Morozov
Russia, Voronezh
e-mail: nnpan@yandex.ru

A calculation-experimental method of prediction the level of free-failure functioning of bipolar integrated circuits in the conditions of pulse gamma-neutron radiation influence is considered. The level of free-failure functioning is estimated by the critical parameter UOL – low-level output voltage, which degradation defines radiation resistance of bipolar digital integrated circuits as a whole. For estimation of production reserve on UOL and estimation of its degradations speed under the action of gamma-neutron pulse the forecasting parameter IOLMAX – maximum low-level output current is measured as low-level output voltage 1,0-2,0 before and in process of radiation influences. Value of IOLMAX defines the load of output transistors and the estimation of its change allows to forecast the value of free-failure functioning level in conditions of pulse gamma-neutron radiation influence.

Keywords: pulse gamma-neutron radiation, level of free-failure functioning, bipolar integrated circuits, radiation resistance, prediction.
15-19
Prediction of Dose Effects in CMOS Integrated Circuits for Radiation Resistance Determination

N.N. Panyushkin

Voronezh State University of Forestry and Technologies named after G.F. Morozov
Russia, Voronezh
e-mail: nnpan@yandex.ru

The possibility of calculation-experimental prediction of dose effects and radiation resistance of CMOS integrated circuits by the use of predestining parameters value – reference value of switching voltage and absolute useful current step-up after test radiation action is shown.

Keywords: CMOS integrated circuits, dose radiation effects, radiation resistance, prediction.
20-25
Testing of a Prototype of Space Particles Registration Block on the Basis of Diamond Sensitive Elements

A.A. Altukhov1, S.V. Balashov2, S.A. Avdyushkin2, R.E. Tikhomirov2, Yu.B. Derevyanko3, K.V. Zakharchenko1, V.A. Kolyubin1, S.A. Lvov1, P.G. Nedosekin1

1JSC ‟Industrial Technological Center ‟UralAlmazInvest”
Russia, Moscow
e-mail: nanophys@mail.ru
2Academician M.F. Reshetnev Information Satellite Systems
Zheleznogorsk, Krasnoyarsk region, Russia
3Research Institute of Scientific Instruments
Lytkarino, Moscow region, Russia

The prototype of space particles registration block is developed and made. The prototype in proton, electron and gamma fields is tested. The accuracy indicators of measurement of absorbed dose rate in silicon of proton and beta radiations are received. The radiation hardness of the prototype is defined.

Keywords: space radiation registration, protons, electrons, diamond detectors, testing, dosimetry, radiation hardness.
26-30
Radiation Effects Caused by Action of Separate Thermonuclear Neutrons and Bremsstrahlung Pulses in Powerful MOSFET Transistors

V.P. Shukailo, O.V. Tkachev, S.M. Dubrovskih, N.V. Basargina, I.V. Vorozhtsova, T.V. Kupyrina, P.S. Primenko, M.M. Armanov

FSUE “Russian Federal Nuclear Center – Academician E.I. Zababakhin
All-Russian Research Institute of Technical Physics”
Snezhinsk, Chelyabinsk region, Russia
e-mail: dep5@vniitf.ru

Radiation effects in powerful MOS devices caused by bremsstrahlung pulse of the accelerator and action of separate neutrons with energy of 14 MeV are researched. On the basis of temperature and dose dependence, it is shown that the single event effect is caused by field multiplication of the charge carriers generated in interaction of a thermonuclear neutron with substance.

Keywords: MOS devices, thermonuclear neutrons, single events, catastrophic failures.
31-33
The Device for Measurement of Neutron Radiation Spectrum

G.L. Pikalov, O.A. Nikolaev, S.V. Kiseev, I.S. Krasnokutsky

SRSI "12 Central Research Institute" of the Ministry of Defence of RF
Sergiev Posad, Moscow region, Russia
e-mail: fgu12tsnii@mil.ru

The scheme and appearance of the device for measurement of neutron energy spectrum with the measuring block based on activation detectors are provided. The calculated response functions of detectors at different distances along an axis of the measuring block depending on neutron energy in the range of 0,25-14,0 MeV and also results of neutron spectrum reconstruction at distance of 12 m from the PRIZ-M reactor are presented.

Keywords: neutrons, energy spectrum, detectors, reactor.