No. 4, 2018
Calculated-Experimental Forecasting Technique of the Absorbed Dose Value Leading to CMOS Microcircuits Failure in the Radio-Electronic Equipment

F.V. Chubrukov

All-Russia Research Institute of Automatics
Moscow, Russia
e-mail: Fedor.chubrukov@gmail.com

The calculated-experimental forecasting technique of CMOS chips functional failures in the radio-electronic equipment is presented. The forecasting technique is the physically based model of CMOS chips functional failures by the absorbed dose of static gamma radiation. The technique allows to predict the absorbed dose value at the CMOS chip failure depending on its application conditions in the electronic equipment.

Keywords: hardness forecasting, functional failure, CMOS microcircuit, calculated-experimental technique, ionizing radiation.
Application of Physical and Topological Simulation for Radiation Hardness Analysis of Serial Semiconductor Devices

A.A. Potekhin, I.Yu. Zabavichev, E.S. Obolenskaya, A.A. Vasin, E.A. Tarasova, A.A. Khananova, A.V. Linev, A.B. Ivanov, A.S. Puzanov, S.V. Obolensky

Lobachevsky State University of Nizhny Novgorod
Nizhny Novgorod, Russia
e-mail: obolensk@rf.unn.ru

Features of calculation assessment method of radiation hardness of serial semiconductor devices based on physical topological simulation by the lack of full information about their design are considered. The method is created and approved for missing data determination on semiconductor devices design from current-voltage and capacitance-voltage dependences for p-n-transitions and Schottky barriers, and also from tabular data on parameters of serial semiconductor devices for the assessment of heating temperature of active areas of semiconductor devices and determination of their radiation hardness. The system of calculation assessment of radiation hardness for various classes of serially manufactured semiconductor devices on the basis of unified approach to their simulation is for the first time offered.

Keywords: bipolar transistor, ionizing radiation, field transistor, semiconductor diode, radiation physics of semiconductor devices, physical topological simulation.
Development and Investigation of Fiber Optic Dosimeter for X-Rays and Gamma-Rays Detection

A.S. Alekseev1, A.V. Berintsev1, S.G. Novikov1, A.A. Chertoriysky1,2, A.B. Muralev1, V.A. Rodionov1, V.V. Svetuhin1,3

1Technological Research Institute S.P. Kapitsa of Ulyanovsk State University
Ulyanovsk, Russia
e-mail: granik@ya.ru
2Ulyanovsk branch of Institute of radio engineering and electronics named after V.A. Kotelnikov
Ulyanovsk, Russia
3Institute of nanotechnologies of microelectronics RAS
Moscow, Russia

This research is aimed at development and investigation of a fiber optic dosimeter for dose rate measuring of X-ray and gamma radiation sources. To determine the fiber optic dosimeter sensitivity the numerical calculations by the Monte-Carlo method using Geant4 simulation toolkit are performed. The results of the numerical calculations are very well conformed with the results of experimental studies. Thereby the experimental studies show that the device is steadily sensitive to radiation sources with dose rate values in the range of 1 to 17 mGy/s.

Keywords: fiber dosimeter, optical sensor, waveshifting fiber, plastic scintillator.
Providing Radiation Hardness of Fiber-Optic Power Transmission System to Electronic Devices

A.N. Trufanov

Sedakov Research Institute of Measuring Systems
Nizhny Novgorod, Russia
e-mail: aTrufanov@niiis.nnov.ru

The possibilities of providing radiation resistance of fiber-optic power transmission system to electronic devices based on the use of powerful continuously operating laser as an energy source are considered. As laser detectors in this system are used the photo converters based on GaAs/AlGaAs heterojunctions. The results of researches of radiation hardness of elements of the system and the system in general are considered.

Keywords: power system, optical fiber, photoconverter, radiation hardness.
Analysis of Solar Activity Influence and Characteristics of Radiation Protection at Choice of Optimale on the Cumulative Dose Parameters of Ascent Trajectory of Electric Propulsion System Vehicle into the Geostationary Orbit

V.V. Goncharov2, A.N. Zagorkov1, O.V. Mikheev1, A.E. Oshkin1

1Khrunichev State Research and Production Space Center
Moscow, Russia
e-mail: salut@khrunichev.com
2Space Systems Research and Development Institute of Khrunichev Space Center
Yubileyny, Moscow region, Russia

The trajectories of interorbital transfer of the electric propulsion system vehicles from low earth orbit into geostationary orbit is analyzed. Influence of solar activity and thickness of radiation protection on efficient choice of trajectory parameters of spacecraft transfer into geostationary orbit by criterion of the minimization of accumulated during flight dose of space ionizing radiation is investigated.

Keywords: cumulative dose, ionizing radiation, spacecraft.
Model of Parameters Determination of the Pulse Ionizing Radiation Field in Elements of Flight Control System

I.V. Evseev, V.V. Kravchuk, A.E. Shmarov

Military academy of Strategic Missile Forces named after Peter the Great
Balashiha, Moscow region, Russia
e-mail: netkrol@yandex.ru
RFNC All-Russian Research Institute of Experimental Physics
Sarov, Nizhny Novgorod region, Russia

Approach to parameters assessment of pulse ionizing radiation field in flight elements by the Monte Carlo method with use of TRIADА program is stated. All main features of interaction of radiation with the existing and perspective materials are considered.

Keywords: pulse ionizing radiation, flight device, Monte Carlo method.

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