No. 3, 2019
Analysis of Electronic Equipment Radiation Resistance to Impact of Space Separate Nuclear Particles on Single Effects on the Tests Results as Part of the Equipment and Componentwise

K.G. Sizova1, M.O. Prygunov2, N.A. Ivanov3

1LLC “NPC “Topaz”
Saint Petersburg, Russia
e-mail: ksizova@npcgranat.ru
2LLC ‟Radioautomaticа”
Moscow, Russia
3NRC «Kurchatov Institute» - PNPI
Gatchina, Leningrad Region, Russia

The components of radio electronic equipment separately and as part of equipment on synchrocyclotron S-1000 in PNPI named by B.P. Constantinov with proton energy of 1000 MeV were tested. The compliance of the test reaction of individual elements of radio electronic equipment to proton impact with the test results of elements as part of equipment was checked. The radio electronic equipment resistance based on the data of its individual elements hardness was quantified. The resistance indices of radio electronic equipment obtained by calculation-experimental and experimental methods was comparative analyzed.

Keywords: tests, reliability, radiation hardness, electronic components, radio electronic equipment, section, high-energy protons, outer space, single radiation effects, method.
Impact of Low Intensity Gamma Neutron Radiation for Parameters of SOI Transistor Structures

Yu.A. Kabalnov, A.N. Kachemtsev, S.V. Obolensky

Branch of RFNC All-Russian Research Institute of Experimental Physics "Sedakov Research Institute of Measuring Systems"
Russia, Nizhny Novgorod
e-mail: Kabalnov@niiis.nnov.ru

The influence of fast neutron flux and associated gamma radiation on CMOS SOI transistor characteristics is considered. Using the Monte Carlo method, the irregularities in collision cascades at neutron radiation of SOI structures are calculated. Experimental data on irradiation of test transistor structures confirm the calculation results on reduction of their dose sensitivity at combined gamma neutron radiation.

Keywords: silicon-on-insulator structures, MOS transistor, gamma neutron radiation, defect simulation, Monte Carlo method, collision cascades, manufacturing technology.
Research of MOS Transistors Gate Insulator Irradiated with Heavy Ions

E.V. Mitin, P.Yu. Gromov, A.E. Kozyukov, A.I. Loskot

1LLC “NPC “Granat”
Saint Petersburg, Russia
e-mail: emitin@npcgranat.ru
2Affiliated enterprise of the United Rocket and Space Corporation - Research Institute of Space Device Engineering
Moscow, Russia
3Alexander Mozhaysky Military Space Academy
Saint Petersburg, Russia

The study of properties of MOS transistors gate oxides irradiated with heavy ions by measuring "charge to breakdown" is resulted. The effect on the results of the electric mode under irradiation and the particles incident angle is discussed. For the first time, the evidence of the gate current "telegraph noise" occurrence in partially burnt-out samples is given.

Keywords: MOS transistor, latent defect, "telegraph noise", heavy ions, SEGR, rupture, research.
Crystal YAG:ND3+ Luminescence аt Excitation by Pulses of Bremsstrahlung and Electron Radiation

V.P. Shukailo, O.V. Tkachev, S.M. Dubrovskih, T.V. Kupyrina

FSUE “Russian Federal Nuclear Center – Academician E.I. Zababakhin All-Russian Research Institute of Technical Physics”
Snezhinsk, Chelyabinsk region, Russia
e-mail: dep5@vniitf.ru

The results of research of spectrum, kinetics and energy output of YAG:Nd3+ luminescent crystals at their irradiation with pulses of bremsstrahlung and electron radiation with average energies 1 and 2 MeV respectively are presented.

Keywords: ionizing radiation, YAG:Nd3+ crystal, radiation induced absorption, luminescence.
Influence of Gamma Irradiation on the Direct Voltage Drop and Reverse Currents of the Medium Power Rectifier Diodes

A.V. Karimov1,2, D.M. Yodgorova1,2, A.Z. Rakhmatov1, A.A. Khakimov2, A.A. Karimov1, Sh.M. Kuliev1,2

1Physical-Technical Institute at SPA ‟Physics-Sun” of the Academy of Sciences of Uzbekistan
Tashkent, Uzbekistan
e-mail: karimov@uzsci.net
2Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan
Tashkent, Uzbekistan

The results of the study of the static current-voltage characteristics of a silicon diode p+-n-n+n++-structure subjected to gamma radiation are presented. It was found that under the influence of gamma irradiation with a dose of Фγ = 5∙1016 cm-2 the direct voltage drop decreases to 10 % due to the formation of radiation centers in the local region of the order of 1 μm at the boundary of the p-n junction. These radiation centers, in turn, lead to a change decrease in the gradient of concentration of the main charge carriers in the base region of n-type silicon, and a slight decrease in the breakdown voltage is associated with shunting of the rectifying p-n-junction by the metal-insulator-metal- junction. In this case, the appearance of an additional section with an exponent of 8 before the breakdown can be associated with breakdown phenomena through a radiation-treated insulator, in this case a microplasma breakdown in the insulator is possible.

Keywords: silicon diode p+-n-n+n++-structure, gamma irradiation, direct voltage drop, metal-insulator-metal-junction, breakdown voltage.
Evaluation Method for Effective Values of Maximum Dose Rate and Gamma Pulse Duration of Pulse Gamma Neutron Simulators

V.S. Figurov1,2, V.V. Baykov1,2

Moscow, Russia
e-mail: vsfig@spels.ru
2National Research Nuclear University ‟MEPhI”
Moscow, Russia

A method for rapid estimation of effective values of maximum dose rate and pulse duration of accompanying gamma radiation of pulse gamma neutron simulators is proposed. The efficiency of gamma radiation is estimated with respect to the radiation of reference simulators. The method makes it possible to quickly determine the effective value of the maximum dose rate at a given point of the radiation field immediately after the simulator pulse and to estimate the effective gamma duration without using a special sensor with integration of its output signal during change of this signal in the range of several orders.

Keywords: pulse gamma-neutron simulators, effective value of maximum dose rate of accompanying gamma-radiation, effective pulse duration of accompanying gamma-radiation, integral duration of radiation-transfer characteristic.
Experimental Evaluation of Annealing of Structural Damages in Silicon Electronic Products after Gamma Neutron Irradiation on Simulator BARS-4

V.S. Figurov1, V.V. Baykov1, V.V. Shelkovnikov2, V.M. Minin2

1National Research Nuclear University ‟MEPhl”
Moscow, Russia
e-mail: vsfig@spels.ru
2Research Institute of Scientific Instruments
Lytkarino, Moscow region, Russia

Preliminary assessment of annealing of structural damages in silicon-based products after pulse gamma neutron radiation on simulator BARS-4 and holding of irradiated products in passive mode is obtained. The evaluation was carried out by measuring the static current transfer coefficient of the base of bipolar transistors of 2Т312Б type for ~ three months after their irradiation with neutron fluence Ф0,1 = 4,3·1013 cm-2 and dose of accompanying gamma radiation D =·9,1·103 R.

Keywords: annealing structural damages in silicon, irradiating silicon-based products with neutron pulse, annealing in passive mode of irradiated products.
Calculation of Parameters of Nuclear Single-Element Thermal Emission Power Plant of Spacecraft at the Initial Design Stage

V.D. Atamasov1, I.V. Kolbasin1, I.I. Dementev1, A.N. Ustinov2, A.M. Kalininа3

1JSC "Design Bureau "Arsenal"
Saint Petersburg, Russia
e-mail: kolbasin777ivan@mail.ru
2JSC "Machine Engineering Plant "Arsenal"
Saint Petersburg, Russia
3Baltic State Technical University "VOENMEH" named after D.F. Ustinov
Saint Petersburg, Russia

The methodology and mathematical apparatus of approximate estimation of calculated characteristics of nuclear power plant with single-element electro generating channels for project works at the initial design stage are described.

Keywords: nuclear power plant, parameters calculation, spacecraft.

  • 140080, Московская обл., г. Лыткарино
  • промзона Тураево, строение 8.
  • +7 (495) 663-90-95
  • +7 (495) 663-90-74
  • risi@niipribor.ru