МЕНЮ

Page.
No. 3, 2020
5-8
Topical Issues of Experimental Evaluation of Electronic Component Base Hardness to X-Radiation Impact

M.V. Bankovsky, M.V. Nazarenko, V.M. Olukhov  

JSC ‟Research Institute of Scientific Instruments”
Lytkarino, Moscow region, Russia
e-mail: MVBankovskii@niipribor.ru

Calculation data of specified evaluation ratio of electronic component base hardness to 7.I12 - 7.I15 X-radiation impact based on the results of tests in physical experiments and at 7.I6, 7.I7, 7.I8 gamma-ray units is presented.

Keywords: electronic component base, X-radiation, hardness.
9-13
Research of Distinctive Features of Error Distribution in SRAM Influenced by Various Types of Ionizing Radiation

O.V. Tkachev1, A.S. Kustov1, A.S. Pilipenko1, V.S. Gryadobitov1,2

1FSUE “Russian Federal Nuclear Center – Academician E.I. Zababakhin
All-Russian Research Institute of Technical Physics”
Snezhinsk, Chelyabinsk region, Russia
e-mail: dep5@vniitf.ru
2Snezhinsk Physics and Engineering Institute of National Research Nuclear University “MEPhI”
Snezhinsk, Chelyabinsk region, Russia

Mechanisms of storage cells errors of SRAM have been determined under the influence of various types of ionizing radiation. The samples were exposed to radiation on electron accelerator (pulse bremsstrahlung), neutron generator (static neutron radiation), and nuclear reactor (pulse gamma and neutron impact). In order to determine the error mechanisms under various radiation exposures, an analysis of cache error sheets (distribution of inverted storage cells) has been applied.

Keywords: single event effects, SRAM, gamma quanta, neutrons, pulse of ionizing radiation.
14-23
Error Injection Considering Device Topology and Data of SPICE-Characterization of Standard Cell Library for Susceptibility of Single Nuclear Particles

I.A. Danilov, A.O. Balbekov, A.I. Khazanova, M.S. Gorbunov

Scientific Research Institute of System Analysis of the Russian Academy of Sciences
Moscow, Russia
e-mail: danilov@niisi.msk.ru

A procedure of multi-level program injection of errors in Verilog simulator of integrated circuit has been presented, considering its topology and data of SPICE-characteristics of standard cell library, with reference to which it had been designed. Thus, simulation under this methodology is performed at several abstraction levels at once. The presented procedure is the evolution of the methodology, presented by the authors earlier, by adding data registration of SPICE-characterization. The procedure, as before, is fully compatible with the standard route of development of error-tolerant integrated circuits. The procedure has been demonstrated on various by error-tolerance options of implementation of computing unit within the encryption core by AES standard.

Keywords: error injection, injection, Verilog, SystemVerilog, SPICE, single event effects, single event upsets, short-term pulse signals, failure tolerance.
24-27
Simulation of Single Voltage Pulse Effect under Tests on Pulse Electrical Durability of Microcircuits in Active Electrical Mode by Testing in Passive Electrical Mode

V.I. Vanin, A.A. Smekalov

JSC ‟RSRI ‟Electronstandart”
Saint Petersburg, Russia
e-mail: v-vanin@mail.ru

The methodology of testing microcircuits for pulse electrical durability, allowing replacing tests in active electrical mode with tests in passive electrical mode, is offered. In that event, the amplitude Um of influencing single voltage pulses in passive electrical mode may fall within the range 0 ≤ Um ≤ Um (pulse electrical durability).

Keywords: microcircuits, pulse electrical durability, single voltage pulse, active and passive electrical modes of microcircuit tests.
28-34
Study of Radiation-Induced Absorption Relaxation in Polymer Optical Fiber

A.A. Konovalov1, O.V. Tkachev2, S.M. Dubrovskih2, K.D. Koksharova2, A.S. Kustov2

1Snezhinsk Physics and Engineering Institute of National Research Nuclear University “MEPhI”
Snezhinsk, Chelyabinsk region, Russia
e-mail: dep5@vniitf.ru
2FSUE “Russian Federal Nuclear Center – Academician E.I. Zababakhin
All-Russian Research Institute of Technical Physics”
Snezhinsk, Chelyabinsk region, Russia

Using polymer fiber as an example, the effects, conditional upon thermal and optical annealing of radiation-induced color centers, created by gamma-radiation, have been examined.

Keywords: radiation damage annealing, gamma-radiation, optical fiber, activation energy, color centers, radiation-induced absorption.
35-38
Ionization Chamber with Transverse Electric Field Against Beam Route

D.A. Amerkanov, E.M. Ivanov, N.A. Ivanov, O.V. Lobanov, V.V. Pashuk

NRC ‟Kurchatov Institute” – PNPI
Gatchina, Leningrad region, Russia
e-mail: pashuk_vv@pnpi.nrcki.ru

Physical properties of absolute ionization monitor of a proton beam, operating in the real-time mode, have been studied. A monitor detector represents two free-air ionization chambers with transverse electric field against beam route, combined in one module. In chambers signal electrodes have different lengths along the beam. The distances between high-voltage and signal electrodes are proportional to lengths of signal electrodes. The option to vary electrode length allows changing the measured proton flux range promptly.

Keywords: ionization detector, proton flux.


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