Page.
No. 1, 2021
5-11
Method for Adjusting Results of Determination of Effective Duration of Radiation Pulses Considering Limited Bandwidth of Measuring System

V.S. Figurov1,2

1National Research Nuclear University "MEPhI
Moscow, Russia
e-mail: vsfig@spels.ru
2JSC "Experimental Scientific and Production Association Specialized Electronic Systems
Moscow, Russia

A method for adjusting the results of determination of effective duration of ionizing radiation pulses, taking limited bandwidth of a measuring system into account, is proposed. The results of practical evaluation of the method, when measuring a pulse shape with effective duration of ~ 5 ns, using measuring system with bandwidth of ~ 100 MHz, are provided.

Keywords: effective duration of ionizing radiation pulses, limited bandwidth of a measuring system, radiation and transfer characteristic of a measuring system, method of adjustment of results of effective duration determination, ARSA unit.
12-16
Methodical Specifics of Tests of Electronic Modules, Containing Powerful MOS Transistors, for Hardness to Irreversible Effects of Single Event Effects

N.N. Bulgakov, V.F. Zinchenko, I.E. Sidorenko

JSC Russian Space Systems
Moscow, Russia
e-mail: otdelenie17@spacecorp.ru

The specifics of tests of complex electronic modules, which consist of powerful MOS transistos, for hardness to irreversible effects of single event effects under heavy ions are reviewed. An analysis of available experimental results has been performed from the point of view of possible influence of cumulative effect on irreversible failures of MOS transistors as part of power supply module.

Keywords: electronic modules, single event effects, powerful MOS transistors, cumulative effect.
17-22
Influence of Relaxation Duration of Radiation Effects on Level of Failure-Free SRAM Operation

O.V. Tkachev1, A.S. Kustov1, K.D. Koksharova1, V.S. Gryadobitov1,2

1FSUE Russian Federal Nuclear Center Academician E.I. Zababakhin
All-Russian Research Institute of Technical Physics
Snezhinsk, Chelyabinsk region, Russia
e-mail: dep5@vniitf.ru
2Snezhinsk Physics and Engineering Institute of National Research Nuclear University MEPhI
Snezhinsk, Chelyabinsk region, Russia

The radiation treatment results of SONY memory chips on various electrophysical and research nuclear facilities under variation of experimental conditions are presented. Levels of failure-free operation are examined, as well as durations of radiation effect relaxation in microchips. The times of radiation effect relaxation and duration of ionizing current are compared. The impact of temperature of a sample on relaxation time of radiation effects and on failure-free operation level of a microchip is estimated.

Keywords: SRAM, gamma quanta, ionizing radiation pulse, level of failure-free operation, surface states, temperature.
23-28
Evaluation of Exponential Radiation and Transfer Characteristic for Analog Parameters of Product by Pulse Spreading Coefficient of Simulator

V.S. Figurov1,2

1National Research Nuclear University "MEPhI
Moscow, Russia
e-mail: vsfig@spels.ru
2JSC "Experimental Scientific and Production Association Specialized Electronic Systems
Moscow, Russia

A method is proposed to determine exponential radiation and transfer characteristic for analog parameters of electronic devices by values of pulse spreading coefficient of a simulator for these parameters. The pulse-spreading coefficient for the given parameter of a product is determined as a ratio of effective response duration of the product by the given parameter to effective duration of an influencing radiation pulse. The notion of a relaxation curve for the given simulator is offered to be put into testing practice. A calculation of this curve for ARSA unit has been carried out.

Keywords: exponential radiation and transfer characteristic, product response on radiation pulse by analog parameter, coefficient of radiation pulse spreading, relaxation curve of a simulator, ARSA unit.
29-32
Study of LED Hardness Based on AlGaAs Heterostructures to Fast Neutron Irradiation in BARS-4 and IRT-T Reactors

A.V. Gradoboev1,2, E.A. Bondarenko1, V.A. Varlachev1, E.G. Emets1, V.V. Sendnev2

1Tomsk Polytechnic University
Tomsk, Russia
e-mail: gava@tpu.ru
2JSC Research Institute of Semiconductor Devices
Tomsk, Russia

The results of a study of the hardness of LEDs in the IR wavelength range to the effect of fast neutrons in the IRT-T reactor are presented. The paper presents the results, obtained using the developed filter for the horizontal channel IRT-T GEK-6, made of boron carbide and cadmium, which absorbs thermal neutrons. The identity of degradation processes in LEDs under the influence of pulsed (BARS-4 unit) and stationary sources of fast neutrons (GEK-6 IRT-T) is shown. The developed technique can be recommended for studying the resistance of various materials and electronic products to the effect of fast neutrons in various irradiation modes.

Keywords: IRT-T, BARS-4, fast neutrons, radiation hardness, LEDs.
33-37
Registration of Subnanosecond Pulses of Electron and X-Ray Radiation

S.L. Elyash, T.V. Loyko, A.L. Yuryev, A.A. Seleznev

RFNC All-Russian Research Institute of Experimental Physics
Sarov, Nizhny Novgorod region, Russia
e-mail: elyash@expd.vniief.ru

Caracteristics of an electron beam, generated by subnanosecond accelerator with double sharpening in the layout of voltage pulse generation, have been registered. Pulse duration of an electron beam current made 240270 ps, current amplitude ~ 1,5 kA, peak electron energy ~ 0,95 MeV. Taking time resolution of registration channel of an electron beam into account, pulse duration of electron current τ0,5 ≈(22020) ps. Pulse caracteristics of semiconductor X-radiation detectors are determined: SPPD 29k and SPPD29-02, which made τ0,5 ≈(32030) ps and τ0,5 ≈(45030) ps respectively.

Keywords: electron beam, X-radiation, subnanosecond duration, time resolution, semiconductor detector.
38-40
Calculation of Physical Process in Accelerating Section of Linear Induction Accelerator

A.P. Metelev

JSC "Research Institute of Scientific Instruments
Lytkarino, Moscow region, Russia
e-mail: APMetelev@niipribor.ru

The goal of this work was getting the calculation of physical process in accelerating section, made in shape of disk radial feeder, of linear induction accelerator from the point of view of the theory of toroid-shape transformator operation. A theoretical calculation of getting the accelerating voltage in section accelerating gap, depending on initial charging voltage and design factors, has been conducted.

Keywords: radial disk feeder, toroid-shape transformator, magnetic flux, induction, accelerating voltage.


  • 140080, ., .
  • , 8.
  • +7 (495) 663-90-95
  • +7 (495) 663-90-74
  • risi@niipribor.ru